FDT86113LZ-VB

FDT86113LZ www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.100 at VGS = 10 V 5.0 0.120 at VGS = 4.5 V 4.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D SOT-223 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 70 °C 5.0 3.5 IDM IAS EAS Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa ID 10 s TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 3.3 2.3 Steady State 100 ± 20 4.5 3.0 25 15 11 1.7 1.2 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 服务热线：400-655-8788 1 FDT86113LZ www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA 100 1.5 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea Unit V 3 ± 100 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 20 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea Max. VDS = 0 V, VGS = ± 20 V IGSS Gate-Body Leakage Typ. nA µA 40 A VGS = 10 V, ID = 6.0 A 0.110 VGS = 10 V, ID = 4.0 A, TJ = 125 °C VGS = 10 V, ID = 4.0 A, TJ = 175 °C 0.122 0.140 VGS = 4.5 V, ID = 3.1 A 0.120 Ω gfs VDS = 15 V, ID = 4.0 A 25 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 18 27 VDS = 50 V, VGS = 10 V, ID = 4.0 A 3.4 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VGS = 0.1 V, f = 5 MHz Rg Gate Resistance 0.5 td(on) Turn-On Delay Time VDD = 50 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.3 IF = 1.7 A, dI/dt = 100 A/µs 1.4 2.4 10 20 10 20 25 50 12 24 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 5 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 4V 16 8 24 16 TC = 150 °C 8 25 °C 2V 0 0.0 - 55 °C 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 3.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 服务热线：400-655-8788 2 FDT86113LZ www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2100 0.30 1800 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.25 0.20 VGS = 4.5 V 0.15 VGS = 10 V 0.10 1500 1200 900 600 Coss 0.05 300 0.00 0 0 8 16 24 32 Crss 0 40 15 90 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 2.2 ID = 6.0 A ID = 6.0 V 2.0 VGS = 10 V 8 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 75 60 45 30 6 4 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 4 8 16 12 0.6 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 50 0.06 TJ = 175 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.05 TJ = 25 °C 10 0.04 ID = 6.0 A 0.03 0.02 0.01 1 0.00 0.00 0.5 1.0 1.5 2.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 2.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 服务热线：400-655-8788 3 FDT86113LZ www.VBsemi.com 0.8 50 0.4 40 0.0 30 Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID = 250 µA - 0.4 - 0.8 20 10 - 1.2 - 50 0 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 TJ - Temperature (°C) 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 4 VBJ1101M www.VBsemi.com SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 服务热线：400-655-8788 5 FDT86113LZ www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.