BT169D

BT169D FSSeries 0.8A Sensitive Gate SCRs Product Summary Symbol Value Unit IT(RMS) 0.8 A VDRM VRRM 600 / 800 V IGT 10~200 μA Feature Application With high ability to withstand the shock loading of large current, Provide high dv/dt rate with strong resistance to electromagnetic interference. Power charger, T-tools, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram TO-92 XXXX BT169D Marking www.fuxinsemi.com Page 1 Ver2.1 BT169D FSSeries 0.8A Sensitive Gate SCRs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 0.8 A ITSM 8 A I2t 0.32 A2s dIT/dt 50 A/μs IGM 1 A PG(AV) 0.1 W Junction Temperature TJ -40 ~ +110 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD Test Condition VD =12V IT=10mA Tj =25℃ VD =1/2VDRM Tj =110℃ Value Unit Min Max 10 200 μA - 0.8 V 0.2 - V latching current IL VD =12V IG=0.5mA - 3 mA Holding current IH RGK=1kΩ Tj =25℃ - 4 mA 10 - V/μs - 1.5 V Tj=25℃ - 5 μA Tj=110℃ - 0.1 mA Critical-rate of rise of commutation voltage dVD/dt VD=2/3VDRM Gate Open Tj =110℃ STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM ITM =1.2A tp=380μs VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case TYP. 60 ℃/W Rth(j-a) Junction to ambient TYP. 150 ℃/W Page 2 Ver2.1 BT169D FSSeries 0.8A Sensitive Gate SCRs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) I T(RMS) (A) P(W) 0.8 FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 0.6 1.0 0.8 0.6 0.4 0.4 0.2 0.2 0 0 0.4 0.2 0.6 0 -50 0.8 I T(RMS) (A) 0 10 4 6 3 4 2 2 1 0 0 10 100 ) 1000 Number of cycles Tj=Tjmax Tj=25ºC ) I GT,I H,I L(T) / I GT,I H,I L(T=25 100 10 2.0 1.5 1.0 0.5 2.5 3.0 V TM (V) FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms I TMS (A) Tc 5 8 0 100 FIG.4: On-state characteristics (maximum values) I TM (A) I TMS (A) FIG.3: Surge peak on-state current versus number of cycles 50 3.0 2.5 IH IGT 2.0 IL 1.5 1.0 0.5 1 0.01 0.1 www.fuxinsemi.com 1 10 tp(ms) 0.0 -40 Page 3 -20 0 20 40 60 80 120 100 Tj ) Ver2.1 BT169D FSSeries 0.8A Sensitive Gate SCRs Ordering Information BT169 D _ 600 SCRs IT(RMS): 0.8A 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V D:TO-92 TO-92 Package Information www.fuxinsemi.com Page 4 Ver2.1