BT131S

BT131S Series 1.0A 4Quadrants TRIACs Product Summary Symbol Value Unit IT(RMS) 1.0 A VDRM VRRM 600/800 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current,With high commutation performances, 4 quadrants products especially recommended for use on inductive load. Washing machine, vacuums, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram SOT-223-3L Marking BT131 XXXX www.fuxinsemi.com Page 1 Ver2.1 BT131S Series 1.0A 4Quadrants TRIACs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600/800 V Repetitive peak reverse voltage VRRM 600/800 V RMS on-state current IT(RMS) 1 A ITSM 16 A I2t 1.28 A2s Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current dI/dt Ⅰ-Ⅱ-Ⅲ 50 Ⅳ 10 A/μs IGM 2 A PG(AV) 0.5 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD VD =VDRM Tj =125℃ latching current IL VD =12V IGT = 0.1A Holding current IH Critical-rate of rise of commutation voltage dV/dt VD =12V IT = 0.1A Tj =25℃ Value Ⅰ-Ⅱ-Ⅲ Ⅳ Ⅰ-Ⅱ-Ⅲ-Ⅳ Tj =25℃ Ⅰ-Ⅲ-Ⅳ Ⅱ MAX. Unit 5 10 mA MAX. 1.3 V MIN. 0.2 V MAX. 10 15 mA MAX. 5 mA VD=2/3VDRM Gate Open Tj =125℃ MIN. 50 V/μs ITM =1.5A tp=380μs MAX. 1.55 V Tj=25℃ MAX. 5 μA Tj=125℃ MAX. 100 μA Ⅰ-Ⅱ-Ⅲ-Ⅳ STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case(AC) TYP. 23 ℃/W Rth(j-a) Junction to ambient TYP. 60 ℃/W Page 2 Ver2.1 BT131S Series 1.0A 4Quadrants TRIACs Typical Characteristics FIG.2: RMS on-state current versus case temperature (full cycle) I T(RMS) (A) P(W) FIG.1: Maximum power dissipation versus RMS on-state current (full cycle) 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0.2 0.4 0.6 0.8 0 -50 1.0 I T(RMS) (A) 0 100 150 Tc ) FIG.4: On-state characteristics (maximum values) 2.0 I TM (A) I TMS (A) FIG.3: Surge peak on-state current versus number of cycles 50 15 12 Tj=125ºC 1.5 9 1.0 Tj=25ºC 6 0.5 3 0 0 0 10 100 1000 Number of cycles 0.5 1.0 2.0 V TM (V) 1.5 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) ) FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms 2.5 I GT,I H,I L(T) / I GT,I H,I L(T=25 I TMS (A) 1000 2.0 1.5 100 IH IGT IT 1.0 0.5 10 0.01 0.1 www.fuxinsemi.com 1 10 tp(ms) 0.0 -40 -20 0 20 40 60 80 100 120 140 Tj Page 3 ) Ver2.1 BT131S Series 1.0A 4Quadrants TRIACs Ordering Information BT 131 S _ 600 Triacs IT(RMS): 1A 600:VDRM /VRRM≥600V 800:VDRM /VRRM≥800V S:SOT-223-3L SOT-223-3L Package Information www.fuxinsemi.com Page 4 Ver2.1