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S8550-H

S8550-H

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SOT-23

  • 描述:

    晶体管类型:PNP;集射极击穿电压(Vceo):25V;集电极电流(Ic):500mA;功率(Pd):300mW;集电极截止电流(Icbo):100nA;集电极-发射极饱和电压(VCE(sat)@Ic...

  • 数据手册
  • 价格&库存
S8550-H 数据手册
山东晶导微电子股份有限公司 S8550 Jingdao Microelectronics co.LTD SOT-23 S8550 PNP TRANSISTOR 3 FEATURES • Complimentary to S8050 • Collector current: IC=0.5A 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) 2 Symbol Value Unit Collector–Base Voltage V CBO -40 V Collector–Emitter Voltage V CEO -25 V Emitter–Base Voltage V EBO -5 V Collector Current — Continuous IC -0.5 A Collector Dissipation PC 0.3 W T J ,T stg -55~+150 ℃ Parameter Operation Junction and Storage Temperature Range 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Test conditions Symbol Parameter Min Max Unit Collector-base breakdown voltage V (BR)CBO I C =-100uA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-1 mA, I B = 0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100uA, I C = 0 -5 V Collector cut-off current I CBO V CB =-40V, I E = 0 -0.1 uA Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 uA Emitter cut-off current I EBO V EB =-3V, I C = 0 -0.1 uA h FE1 V CE =-1V, I C =-50mA h FE2 V CE =-1V, I C =-500mA 400 120 DC current gain 50 Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -0.6 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -1.2 V fT Transition frequency V C E =-6V, I C =-20mA, f=30MHz MH Z 150 CLASSIFICATION O F h FE( 1) RANK RANGE 2020.10 L H J 120-200 200-350 300-400 www.sdjingdao.com Page 1 of 4 山东晶导微电子股份有限公司 S8550 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS COLLECTOR CURRENT I C (mA) COMMON EMITTER T a =25℃ -400uA -360uA -80 -320uA -280uA -60 -240uA -200uA -40 -160uA -120uA -20 -80uA I B =-40uA -0 -4 -8 -12 400 200 0 25 CAPACITANCE C (pF) f=1MHz I E=0/ Ic=0 Ta=25℃ 10 C ob 1 0.1 -0.1 -1 -10 -20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) Fig.4 C ob / C ib —— V CB / V EB 100 C ib V CEsat —— I C -10 Τ α =25℃ -1 β=10 -0.1 -1 -10 -100 -1000 Fig.6 V BEsat —— I C -1.6 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 150 -100 h FE --Ic 300 200 100 COMMON EMITTER V CE =-1V 10 -0.1 -1.2 Τ α =25℃ -0.8 -0.4 β=10 -0 -10 -1 -100 -500 Fig.8 TRANSITION FREQUENCY f T (MHz) -1000 V CE =-5V -100 T a =100℃ -10 T a =25℃ -1 -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -100 -500 -600 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 -10 -1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 125 I C , COLLECTOR CURRENT (mA) 400 f T —— I C 300 V CE=-6V Ta=25℃ 200 100 -1.2 0 -0 -50 -100 -150 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 100 -1000 REVERSE BIAS VOLTAGE V (V) Fig.5 75 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig.3 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) I C —— V CE Fig.1 -100 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 S8550 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code S8550 2TY 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit : (inches) 2020.10 201012 Page 3 of 4 山东晶导微电子股份有限公司 S8550 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4
S8550-H 价格&库存

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S8550-H
  •  国内价格
  • 50+0.07755
  • 500+0.06048
  • 3000+0.05109

库存:2456