NCE30H12K-VB

NCE30H12K www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () a, e Qg (Typ) ID (A) 0.0023 at VGS = 10 V 120 0.0032 at VGS = 4.5 V 100 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU 82 nC APPLICATIONS D • OR-ing • Server • DC/DC TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C 98e ID 35.8b, c Single Pulse Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C IAS 39 EAS 94.8 TC = 70 °C TA = 25 °C IS A 3.13b, c 250a 175 PD W 3.75b, c 2.63b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range mJ 90a, e TC = 25 °C Maximum Power Dissipation A 27b, c 200 IDM Avalanche Current Pulse V 120a, e TA = 70 °C Pulsed Drain Current Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol b, d Typ. Max. t  10 sec RthJA 32 40 Steady State RthJC 0.5 0.6 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. 服务热线：400-655-8788 1 NCE30H12K www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 35 mV/°C - 7.5 1.5 2.5 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 90 µA A VGS = 10 V, ID = 38.8 A 0.0023 VGS = 4.5 V, ID = 37 A 0.0032 VDS = 15 V, ID = 38.8 A 160  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 6201 VDS = 15 V, VGS = 0 V, f = 1 MHz td(off) pF 970 VDS = 15 V, VGS = 10 V, ID = 38.8 A 171 257 81.5 123 VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 34 f = 1 MHz 1.4 2.1 18 27 VDD = 15 V, RL = 0.625  ID  24 A, VGEN = 10 V, Rg = 1  11 17 70 105 tf 10 15 td(on) 55 83 180 270 55 83 12 18 tr td(off) nC 29 td(on) tr 1725 VDD = 15 V, RL = 0.67  ID  22.5 A, VGEN = 4.5 V, Rg = 1  tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD 120 TC = 25 °C 120 IS = 22 A 0.8 1.2 A V Body Diode Reverse Recovery Time trr 52 78 ns Body Diode Reverse Recovery Charge Qrr 70.2 105 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 27 25 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 NCE30H12K www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 90 VGS = 10 V thru 4 V 2.4 I D - Drain Current (A) I D - Drain Current (A) 75 60 45 30 1.8 1.2 TC = 25 °C 0.6 15 VGS = 2 V 0 0.0 TC = 125 °C VGS = 3 V TC = - 55 °C 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) 0 2.5 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.0060 TC = 25 °C 0.0050 R DS(on) – On-Resistance (Ω) G fs - Transconductance (S) 500 TC = 125 °C 400 300 TC = - 55 °C 200 0.0040 VGS = 10 V 0.0020 0.0010 100 0.000 0 0 10 20 30 40 50 60 70 80 90 0 15 75 ID - Drain Current (A) 30 45 60 ID - Drain Current (A) Transconductance RDS(on) vs. Drain Current 8000 90 10 ID = 38.8 A V GS - Gate-to-Source Voltage (V) Ciss 6000 C - Capacitance (pF) VGS = 4.5 V 0.0030 4000 2000 Coss 1000 Crss 0 0 VDS = 15 V 8 VDS = 24 V 6 4 2 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance 30 0 30 90 120 150 60 Qg - Total Gate Charge (nC) 180 Gate Charge 服务热线：400-655-8788 3 NCE30H12K www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V, ID= 38.8 A VGS = 4.5 V, ID = 27 A 10 1.0 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.2 0.8 0.6 0.4 1 T J = 150 °C T J = 25 °C 0.1 0.01 0.2 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature 2.8 0.005 0.004 2.4 TA = 125 °C V GS(th) Variance (V) RDS(on) -On-Resistance (Ω) ID = 38.8 A 0.003 TA = 25 °C 0.002 ID = 250 µA 2.0 1.6 1.2 0.001 0.000 0 2 4 6 8 10 0.8 - 50 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Threshold Voltage 125 150 175 1000 *Limited by rDS (on) I D - Drain Current (A) 100 10 10 ms 100 ms 1 1s 10 s dc 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 NCE30H12K www.VBsemi.com 300 300 250 250 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 150 Package Limited 100 50 200 150 100 50 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 服务热线：400-655-8788 5 NCE30H12K www.VBsemi.com TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 Note • Dimension L3 is for reference only. 服务热线：400-655-8788 6 NCE30H12K www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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