HD100N02

HD100N02 N-Channel Trench Power MOSFET General Description BVDSS = 20 V The H D100N02 uses advanced trench technology to provide RDS(on) =5.5mΩ excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a ID = 100 A wide variety of applications. Features ● VDS = 20V,ID =100 A RDS(ON) < 5.5mΩ @ VGS =4.5V RDS(ON) < 9mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package TO Schematic Diagram Application ● ● ● Battery Protection Load switch Power management 100% UIS TESTED! 100% ΔVds TESTED! Table 1. -252(DPAK) top view Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit 20 V ±12 V 100 A 100 A 340 A Maximum Power Dissipation(Tc=25℃) 87 W Maximum Power Dissipation(Tc=100℃) 43 W 340 mJ -55 To 175 ℃ VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) ID Drain Current-Continuous(Tc=100℃) IDM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 2) PD EAS TJ,TSTG Table 2. Operating Junction and Storage Temperature Range Thermal Characteristic Symbol RJC (Note 3) Avalanche energy Parameter Thermal Resistance,Junction-to-Case -1- Typ Max Unit - 1.72 ℃/W 2019-08-26 V2.1 HD100N02 Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ 20 25 Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 1.1 V VGS(th) gFS RDS(ON) Forward Transconductance Drain-Source On-State Resistance 0.5 V 0.7 VDS=5V,ID=15A 40 S VGS=4.5V, ID=20A(Tc=25℃) 3.9 5.5 mΩ VGS=4.5V, ID=20A (Tc=125℃) 5.4 8 mΩ VGS=2.5V, ID=15A 6 9 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2800 pF 353 pF 265 pF 1.1 Ω 17 nS 49 nS Turn-Off Delay Time 74 nS tf Turn-Off Fall Time 26 nS Qg Total Gate Charge 32 nC Qgs Gate-Source Charge 3 nC Qgd Gate-Drain Charge 11 nC VDS=15V,VGS=0V, f=1.0MHz VGS=0V, VDS=0V,f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) VGS=4.5V, VDS=15V, RL=0.75,RGEN=3 VGS=4.5V, VDS=10V, ID=12A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=20A 100 A 1.2 V trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/s 23 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 10 nC Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃,VDD=30V,VG=4.5V, RG=25Ω, -2- 2019-08-26 V2.1 HD100N02 Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： -3- 2019-08-26 V2.1 HD100N02 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Id (A) Figure 2. Transfer Characteristics Id (A) Figure 1. Output Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 4. Drain Current Id (A) Normalized BVDSS Figure 3. Max BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 6. RDS(ON) vs Junction Temperature Normalized Vth Normalized Rdson Figure 5. VGS(th) vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) -4- 2019-08-26 V2.1 HD100N02 Figure 8. Capacitance Vgs (V) C Capacitance(pF) Figure 7. Gate Charge Waveforms Qg(nC) VDS Drain-to-Source Voltage(V) Figure 10. Maximum Safe Operating Area Is (A) Id (A) Figure 9. Body-Diode Characteristics Vsd (V) VDS Drain-to-Source Voltage(V) Figure 11. Normalized Maximum Transient Thermal Impedance -5- 2019-08-26 V2.1 HD100N02 TO-252 Package Information 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 0.5+0.1 -0.05 2.3typ 2 3typ 2.3typ -6- 2019-08-26 V2.1