LNG07R085H

LNG07R085H Lonten N-channel 70V, 70A, 8.5mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS effect transistors are trench using DMOS technology. This advanced technology has been 70V RDS(on).max@ VGS=10V 8.5mΩ ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with Pin Configuration stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  70V,70A,RDS(on).max=8.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green device available TO-252 D Applications  Motor Drives  UPS  DC-DC Converter G Pb S N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter Symbol Value Unit 70 V 70 A 44 A IDM 280 A Gate-Source voltage VGSS ±20 V Avalanche energy EAS 144 mJ Power Dissipation PD 78 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Drain-Source Voltage Continuous drain current VDSS ( TC = 25°C ) ( TC = 100°C ) Pulsed drain current 1) 2) ID Thermal Characteristics Value Unit Thermal Resistance, Junction-to-Case Parameter RθJC Symbol 1.6 °C/W Thermal Resistance, Junction-to-Ambient3) RθJA 125 °C/W Package Marking and Ordering Information Device Device Package Marking Units/Reel LNG07R085H TO- 252 LNG07R085H 2500 Version 0.1,Nov-2020 1 www.lonten.cc Electrical Characteristics Parameter LNG07R085H TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA 70 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=250uA 2.0 3.0 4.0 V Drain-source leakage current IDSS VDS=70 V, VGS=0 V, TJ = 25°C --- --- 1 μA VDS=56 V, VGS=0 V, TJ = 125°C --- --- 30 μA Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0 V --- --- -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=30 A,TJ = 25°C --- 7.2 8.5 mΩ Forward transconductance gfs VDS =5 V , ID=30A --- 63 --- S --- 3570 --- --- 248 --- --- 197 --- --- 17.8 --- --- 27.6 --- --- 102 --- --- 28.6 --- --- 3.25 --- --- 21.2 --- Dynamic characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Gate resistance Rg VDS = 25 V, VGS = 0 V, f= 1MHz VDD = 30V,VGS=10V, ID =30 A VGS=0V, VDS=0V, f=1MHz pF ns Ω Gate charge characteristics Gate to source charge Qgs Gate to drain charge Qgd VDS=30 V, ID=30A, --- 17.9 --- Gate charge total Qg VGS= 10 V --- 65.4 --- Gate plateau voltage Vplateau --- 5 --- V nC Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- 65 A Pulsed Source Current4) ISM --- --- 260 A Diode Forward Voltage VSD VGS=0V, IS=30A, TJ=25℃ --- --- 1.2 V Reverse Recovery Time trr IS=25A, di/dt=100A/us, --- 28.4 --- ns Reverse Recovery Charge Qrr TJ=25℃ --- 21.3 --- nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: VDD=35V, VGS=10V, L=0.5mH, IAS=24A, RG=25Ω, Starting TJ=25℃. 3: The value of RthJA is measured by placing the device in a still air box which is one cubic foot. 4. Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. Version 0.1,Nov-2020 2 www.lonten.cc LNG07R085H Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics VGS=4.5V,6V,8V,10V Figure 2. Transfer Characteristics Common Source VDS=5 V Pulse test Common Source Tc = 25°C Pulse test From Bottom to Top 125°C VGS=4V 25°C VGS=3.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance vs.Drain Current Figure 4.On-Resistance vs.Temperature VGS = 10V ID=30A VGS = 10V T -Junction Temperation (°C) Drain Current ID (A) J Figure 5.Body-Diode Characteristics Figure 6.Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 125°C Notes: f = 1 MHz VGS=0 V 25°C Coss Crss Drain-Source Voltage VDS (V) Source-Drain Voltage VSD (V) Version 0.1,Nov-2020 3 www.lonten.cc LNG07R085H Figure 7.Gate Charge Characteristics Figure 8.Drain Current Derating 80 Vgs = 10 V 70 Vds = 30 V 60 ID = 25 A ID(A) 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Case temperature(C) Total Gate Charge QG (nC) Figure 9.Power Dissipation vs.Temperature 80 PD(W) 60 40 20 0 0 20 40 60 80 100 120 140 160 Case temperature(C) ZJC(normalized) Transient Thermal Resistance Figure 11. Normalized Maximum Transient Thermal Impedance (RthJC) 1 0.7 0.5 0.3 0.1 RθJC =1.6℃/W 0.1 0.05 0.02 0.01 0.01 PD single pulse 1E-3 1E-6 1E-5 Ton 1E-4 1E-3 0.01 T 0.1 t,Time (s) Version 0.1,Nov-2020 4 www.lonten.cc LNG07R085H Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveform Diode Recovery Test Circuit & Waveform Version 0.1,Nov-2020 5 www.lonten.cc LNG07R085H Mechanical Dimensions for TO-252 DIMENSIONS IN MILLITMETERS Version 0.1,Nov-2020 DIMENSIONS IN INCHES SYMBOL MIN MAX MIN MAX A 2.18 2.4 0.086 0.094 A1 - 0.2 - 0.008 A2 0.9 1.17 0.035 0.046 b 0.65 0.9 0.026 0.035 b3 4.95 5.5 0.195 0.217 c 0.43 0.89 0.017 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.8 0.250 0.268 E1 4.32 - 0.170 e 2.286BSC - 0.09BSC H 9.4 10.5 0.370 0.413 L 0.38 1.78 0.015 0.070 L1 2.90BSC 0.114BSC L2 0.51BSC 0.020BSC L3 0.88 1.28 0.035 0.050 L4 - 1.02 - 0.040 L5 1.65 1.95 0.065 0.077 θ 0° 10° 0° 10° 6 www.lonten.cc LNG07R085H Version Information____________________________________ __ ____________ LNG07R085H Revision:2020-11-19,Rev 0.1 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 0.1,Nov-2020 7 www.lonten.cc