KCD3008A

KIA 85V 4.5mR N-CHANNEL MOSFET KCX3008A SEMICONDUCTORS 1. Features  Uses advanced SGT technology  Extremely low RDS(on).typ=4.5 mΩ@Vgs=10V  Excellent gate charge x RDS(on) product(FOM) 2. Description  Motor Drives  SR(Synchronous Rectification)  DC/DC Converters  General purpose applications 3. Pin configuration Pin DFN5*6 Pin TO-252、TO-263 Function 4 1 Gate 5,6,7,8 2 Drain 1,2,3 3 Source 1 of 6 Rev 1.1.Apr. 2021 KIA 85V 4.5mR N-CHANNEL MOSFET KCX3008A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KCB3008A TO-263 KIA KCY3008A DFN5*6 KIA KCD3008A TO-252 KIA 5. Absolute maximum ratings TC=25 ºC unless otherwise specified Parameter Symbol Drain-to-Source Voltage Continuous Drain Current Ratings TO-263 DFN5*6 VDSS TC=25 ºC(Silicon limited) TC=25 ºC(Package limited) TC=100 ºC(Silicon limited) Pulsed drain current (TC = 25°C, tp limited by Tjmax) Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Gate-Source voltage Power dissipation (TC = 25 ºC) 85 Unit V 160 100 100 120 100 80 60 IDP 90 70 480 EAS 560 mJ VGS ±20 V ID Ptot TJ& TSTG Junction & Storage Temperature Range TO-252 220 90 -55 85 to 175 A W ºC 6. Thermal characteristics Parameter Symbol Ratings Thermal resistance, junction-ambient RθJA TO-263 60 Thermal resistance, Junction-case RθJC 0.68 2 of 6 DFN5*6 60 TO-252 60 1.66 1.76 Rev 1.1.Apr. 2021 Units ºC/W KIA 85V 4.5mR N-CHANNEL MOSFET KCX3008A SEMICONDUCTORS 7. Electrical characteristics (TJ=25°C,unless otherwise notes) Symbo l Conditions Min Typ Max Units Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 85 90 - V Zero Gate Voltage Drain Current IDSS VDS=85V , VGS=0V ,Tj=25 ºC - - 1 VDS=85V , VGS=0V, Tj=125 ºC - 5 - Parameter Static characteristics Gate threshold voltage μA VGS(th) VDS=VGS, ID=250μA ,Tj=25 ºC 2.0 3.0 4.0 V IGSS VGS=20V,VDS=0V - - 100 nA RDS(on) VGS=10V,ID=50A, Tj=25 ºC - 4.5 5.5 mΩ gfs VDS=5V,ID=50A - 80 - S Gate Resistance RG VGS=0V,VDS=0V F=1MHz - 1.5 - Ω Input capacitance Ciss - 4030 - pF - 545 - pF Gate leakage current Drain-source on-resistance Transconductance Dynamic characteristics VDS=40V,VGS=0V, F=1MHz Output capacitance Coss Reverse transfer capacitance Crss - 35 - pF Turn-on delay time td(on) - 20 - ns - 38 - ns - 45 - ns - 20 - ns - 65 - nC - 25 - nC - 14 - nC Rise time Turn-off delay time Fall time tr VDS=40V,Tj=25 ºC, VGS=10V,RL=3Ω td(off) tf Gate Charge Characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=40V,ID=25A, VGS=10V, F=1MHz Diode characteristics Diode forward voltage VSD VGS=0V,ISD=50A - 0.85 1.4 V Reverse recovery time trr - 60 - ns Reverse recovery charge Qrr IF=20A DlF/dt=500A/μs - 340 - nC 3 of 6 Rev 1.1.Apr. 2021 KIA 85V 4.5mR N-CHANNEL MOSFET KCX3008A SEMICONDUCTORS 8. Typical Characteristics 4 of 6 Rev 1.1.Apr. 2021 KIA 85V 4.5mR N-CHANNEL MOSFET KCX3008A SEMICONDUCTORS 5 of 6 Rev 1.1.Apr. 2021 KIA 85V 4.5mR N-CHANNEL MOSFET KCX3008A SEMICONDUCTORS 6 of 6 Rev 1.1.Apr. 2021