KND3403B

KIA 85A 30V N-CHANNEL MOSFET KNX3403B SEMICONDUCTORS 1. Features KNX3403B is an N-channel enhancement mode power Mosfet field effect transistor which is produced using KIA’s LVMosfet technology.the improved process and cell structure have been especially tailored to minimize on-state resistance,provide superior switching performance. This device is widely used in UPS,Power Management for Inverter Systems. 2. Features      85A, 30V, RDS(on) typ. = 4.5mΩ(typ.)@VGS = 10 V Low gate charge Low Crss Fast switching Improved dv/dt capability 3. Pin configuration Pin DFN5*6 Pin TO-252 Function 4 1 Gate 5,6,7,8 2 Drain 1,2,3 3 Source 1 of 5 Rev 1.1 May. 2021 KIA 85A 30V N-CHANNEL MOSFET KNX3403B SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KND3403B TO-252 KIA KNY3403B DFN5*6 KIA 5. Absolute maximum ratings (TC= 25ºC , unless otherwise noted) Symbol VDSS Parameter Drain-Source Voltage ID Drain Current -Continuous (TC = 25 ºC) -Continuous (TC = 100 ºC) IDM VGSS EAS Drain Current -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy PD Power Dissipation (TC = 25 ºC) -Derate above 25 ºC TJ,TSTG (Note 1) Operating and Storage Temperature Range Value 30 85 61 340 ±20 156 71 0.47 Units V A A A V mJ W W/ºC -55 to +150 ºC Value 2.1 62 Units ºC /W ºC /W 6. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 of 5 Rev 1.1 May. 2021 KIA 85A 30V N-CHANNEL MOSFET KNX3403B SEMICONDUCTORS 7. Electrical characteristics Symbol (TC= 25ºC , unless otherwise noted) Test Conditions Min Typ Max Parameter Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 30 -- -- V IDSS Drain-Source Leakage Current VDS = 30 V, VGS = 0 V -- -- 1 uA IGSS Gate- Source Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 nA VDS = VGS, ID = 250 uA 0.8 1.3 2.5 V VGS = 10 V, ID = 20 A -- 4.5 5.5 mΩ VGS = 4.5V, ID = 15 A -- 5.5 7.2 mΩ f = 1.0 MHz -- 5.0 -- Ω -- 2200 -- pF -- 270 -- pF -- 205 -- pF -- 11 -- ns -- 87 -- ns -- 140 -- ns -- 82 -- ns -- 47 -- nC -- 8.5 -- nC -- 9.9 -- nC -- -- 85 A -- -- 340 A -- -- 1.4 V -- 15 -- ns -- 7.0 -- uC On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance RG Gate Resistance Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 20 V,VGS=4.5V, ID = 60 A, RG =1.8 Ω (Note2.3) VDD = 24 V, ID = 30A, VGS = 10 V (Note 2,3) Drain-Source Diode Characteristics and Maximum Ratings Integral Reverse P-N IS Continuous Source Current Junction Diode in the ISM Pulsed Source Current MOSFET VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =20 A trr Qrr Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 30 A, dIF / dt = 100 A/us (Note 2) Notes: 1. L = 0.5mH, VDD = 15V, VGS = 10V,RG = 25Ω, Starting TJ = 25°C 2. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 3. Essentially independent of operating temperature 3 of 5 Rev 1.1 May. 2021 KIA 85A 30V N-CHANNEL MOSFET KNX3403B SEMICONDUCTORS 8. Typical Characteristics 4 of 5 Rev 1.1 May. 2021 KIA 85A 30V N-CHANNEL MOSFET KNX3403B SEMICONDUCTORS 5 of 5 Rev 1.1 May. 2021