TF70N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 Description TO-252 TO-251 D The 70N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It S can be used in a wide variety of applications. S D G G General Features Equivalent Circuit RDS(ON) VDSS ID @10V (typ) 5.5 mΩ 30V D 70A G ● High density cell design for ultra low Rdson S ● Fully characterized avalanche voltage and current MARKING ● Excellent package for good heat dissipation Application ● Power switching application 70N03 70N03 TFYWCP TFYWCP ● Hard switched and high frequency circuits ● Uninterruptible power supply Y :year code W :week code Absolute Maximum Ratings (TA=25℃ ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 70 A IDM 245 A PD 46 W TJ,TSTG -55 To 150 ℃ RθJA 2.1 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 30 32 - V Zero Gate Voltage Drain Current IDSS VDS =28V, V GS=0V - - 500 nA Off Characteristics www.sztuofeng.com 1 Jun 2020 V1.02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) 1 RDS(ON) 1.5 5.5 8.0 2.0 6.0 9.8 V Drain-Source On-State Resistance VDS=VGS,ID=250µA VGS=10V, ID=30 A VGS=4.5V, ID=20A VDS=5V,ID=30A Gate-Body Leakage Current On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS 10 mΩ S (Note4) Input Capacitance Clss - 1614 - PF Output Capacitance Coss - 245 - PF Crss - 215 - PF Turn-on Delay Time td(on) - 7.5 - nS Turn-on Rise Time tr VDD=15V,I D=30A - 14.5 - nS td(off) VGS=10V,RG=3.0Ω - 35.2 - nS - 9.6 - nS - 33.7 - nC - 8.5 - nC - 7.5 - nC - 0.95 1.2 V - - 70 A Reverse Transfer Capacitance Switching Characteristics VDS=15V,V GS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=15V,ID=30A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=30A IS Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.sztuofeng.com 2 Jun 2020 V1.02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 100 ID (A) 10V 80 100 7V ID (A) 80 5V 3.5V 60 60 40 40 125℃ 3V 25℃ 20 20 VGS=2.5V VDS(V) 0 0 1 2 3 4 0 5 1.0 2.0 3.0 4.0 5.0 6.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current IS(A) RDS(ON) (mΩ) 14.0 VGS(V) 0 103 12.0 10.0 102 VGS=4.5V TJ=125℃ 8.0 TJ=25℃ 101 6.0 VGS=10V 4.0 VGS=0V ID(A) 2.0 0 10 20 30 100 0.2 40 Figure 5: Gate Charge Characteristics 10 8 0.4 0.6 0.8 VSD(V) 1.0 1.2 1.4 1.6 1.8 Figure 6: Capacitance Characteristics VGS(V) 2100 VDS=15V ID=30A C(pF) 1800 Ciss 1500 6 1200 900 4 Coss 600 2 0 0 300 Qg(nC) 8 www.sztuofeng.com 16 Crss VDS (V) 0 24 32 40 0 3 6 12 18 24 30 Jun 2020 V1.02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature VBR(DSS)(V) 1.3 RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area 120 1000 100 100μs 100 150 200 ID(A) 60 1ms DC 40 TC=25℃ Single pulse 0.1 0.1 50 80 10μs 1 0 100 1μs Limited by R DS(on) -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 10 Tj (℃) 20 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃/W) 100 10-1 PDM D=0.5 D=0.2 t1 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) 10-2 10-3 -6 10 10-5 10-4 www.sztuofeng.com 10-3 10-2 10-1 100 101 4 Jun 2020 V1.02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms www.sztuofeng.com 5 Jun 2020 V1.02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 Package Information TO-252 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252-3 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 0.005 0.13 A1 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 0.024 c 0.46 0.61 0.018 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 0 www.sztuofeng.com 0.040 1.02 0° 6.8 MIN. 6.6 3 MIN. 0.090 BSC H L4 6.25 MIN. 8° 0° 8° 6 2.286 1.5 MIN. 4.572 UNIT: mm Jun 2020 V1.02 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 70N03 TO-251 Package Information Symbol Dimensions In Millimeters Min. Max. Dimensions In Inches Min. Max. A 2.200 2.400 0.087 0.094 A1 1.050 1.350 0.042 0.054 B 0.700 1.000 0.028 0.040 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 6.000 0.213 e 2.300 TYP. 0.237 0.091 TYP. e1 4.500 4.700 0.177 0.185 L 4.900 9.400 0.194 0.372 Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exac www.sztuofeng.com 7 Jun 2020 V1.02