TF80N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 80N03 Description D The 80N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S Schematic diagram General Features RDS(typ) VDSS ID 4.9 mΩ@10V 30V 80A 7.3 mΩ@4.5V 80N03 TFXXXYY ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Marking and pin Assignment ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-252 Absolute Maximum Ratings (TA=25℃ ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V ID 80 A IDM 300 A PD 55 W TJ,TSTG -55 To 150 ℃ RθJA 1.8 ℃/W Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250µA 30 32 - V Zero Gate Voltage Drain Current IDSS VDS =28V, V GS=0V - - 500 nA Off Characteristics www.sztuofeng.com 1 May 2020 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 80N03 IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) 1 RDS(ON) 1.3 4.9 7.3 2.0 5.5 8.5 V Drain-Source On-State Resistance VDS=VGS,ID=250µA VGS=10V, ID=30 A VGS=4.5V, ID=20A VDS=5V,ID=20A Gate-Body Leakage Current On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS 15 mΩ S (Note4) Input Capacitance Clss - 2016 - PF Output Capacitance Coss - 251 - PF Crss - 230 - PF Turn-on Delay Time td(on) - 20 - nS Turn-on Rise Time tr VDD=10V,I D=30A - 15 - nS td(off) VGS=10V,RG=2.7Ω - 60 - nS - 10 - nS - 60.5 - nC - 8.1 - nC - 7.8 - nC - 0.90 1.2 V - - 80 A Reverse Transfer Capacitance Switching Characteristics VDS=15V,V GS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V,ID=30A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD VGS=0V,IS=30A IS Notes: 1. 2. 3. 4. Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Guaranteed by design, not subject to production www.sztuofeng.com 2 May 2020 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 80N03 Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： www.sztuofeng.com 3 May 2020 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 80N03 ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance Normalized Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.sztuofeng.com Figure 6 Source- Drain Diode Forward 4 May 2020 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET Normalized BVdss C Capacitance (pF) 80N03 TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 5 May 2020 V1.0 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 80N03 Package Information TO-252-2L E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252-3 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 0.005 0.13 A1 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 0.024 c 0.46 0.61 0.018 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 0 www.sztuofeng.com 0.040 1.02 0° 6.8 MIN. 6.6 3 MIN. 0.090 BSC H L4 6.25 MIN. 8° 0° 8° 6 2.286 1.5 MIN. 4.572 UNIT: mm May 2020 V1.0