ME60N04

ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60N04 is the N-Channel logic enhancement mode power ● RDS(ON)≦12mΩ@VGS=10V field effect transistors are produced using high cell density DMOS ● RDS(ON)≦17mΩ@VGS=4.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as LCD inverter, computer power capability management and DC to DC converter circuits which need low in-line APPLICATIONS power loss. ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter PIN ● Secondary Synchronous Rectification CONFIGURATION (TO-252-3L) Top View e Ordering Information: ME60N04 (Pb-free) ME60N04-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Steady Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC=25℃ (Tj=150℃,limited by package) TC=70℃ ID Pulsed Drain Current IDM Maximum Power Dissipation TC=25℃ (Note A) TC=70℃ PD Operating Junction Temperature 39 31 156 30 18.5 A A W TJ -55 to 150 ℃ Thermal Resistance-Junction to Ambient(Note A) RθJA 42 ℃/W Thermal Resistance-Junction to Case(Note A) RθJC 4.3 ℃/W Note A: The device mounted on 1in2 FR4 board with 2 oz copper Dec, 2009-Ver4.3 01 ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Unit STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 40 1 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistancea VSD Diode Forward Voltage V 1.9 3 V VDS=0V, VGS=±20V ±100 nA VDS=40V, VGS=0V 1 μA VGS=10V, ID= 15A 9 12 VGS=4.5V, ID= 13A 13 17 IS=15A, VGS=0V 0.8 1.2 mΩ V DYNAMIC Qg (TOT) Total Gate Charge, VGS=10V 31 36 Qg Total Gate Charge, VGS=4.5V 16 18 Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 60 td(on) Turn-On Delay Time 16 20 tr Turn-On Rise Time 13 17 td(off) Turn-Off Delay Time 60 75 tf Turn-On Fall Time 7 10 VDS=20V, ID=15A nC 6.5 8.3 Vgs=Vds=0V, f=1MHZ 1.6 1240 VDS=20V, VGS=0V, f=1MHz VDD=20V, ID=1A VGS=10V, RGEN=6Ω Ω 1500 pF 170 ns Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Dec, 2009-Ver4.3 02 ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Dec, 2009-Ver4.3 03 ME60N04/ME60N04-G N- Channel 40V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Dec, 2009-Ver4.3 04