PTD4080B

PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Features D ■ RDS(on) (Typical 5.5m Ω )@VGS=10V ■ Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ◀ G S D G S TO-252 Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Parameter Rating Unit Common Ratings (T J =25°C Unless Otherwise Noted) VGS Gate-Source Voltage ±20 V V(BR)DSS Drain-Source Breakdown Voltage 40 V TJ Maximum Junction Temperature -50 to 175 °C TSTG Storage Temperature Range --50 to 175 °C IS Diode Continuous Forward Current 60 A 240 A Mounted on Large Heat Sink (TJ =25°C Unless Otherwise Noted) (Note1) IDM Pulse Drain Current Tested (Sillicon Limit) ID Continuous Drain current@VGS=10 V TC =25°C 60 A PD Maximum Power Dissipation TC =25°C 47 W EAS Sing Pulsed Avalanche Energy 81 mJ R JC Thermal Resistance Junction−to−Case 3.2 °C/W (Note2) - 1- 2019-8-20 PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 40 -- -- V IDSS Zero Gate Voltage Drain current(Tc=25℃) VDS=40V,VGS=0V -- -- 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1 -- 2.5 V RDS(ON) Drain-Source On-State Resistance VGS=10V,ID=20A -- 5.5 7 mΩ RDS(ON) Drain-Source On-State Resistance VGS=4.5V,ID=20A -- 9 12.5 mΩ -- 2400 -- pF -- 192 -- pF -- 165 -- pF -- 37 -- nC -- 6 -- nC -- 7 -- nC -- 12 -- nS -- 12 -- nS -- 38 -- nS -- 9 -- nS -- 1.2 V (Note3) (Note3) Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=20 V,VGS=0V, f=1MHz VDS=20V,ID=30A Qgs Gate-Source Charge Qgd Gate-Drain Charge Switching Characteristics VGS=10V note B t d(on) Turn-on Delay Time tr Turn-on Rise Time t d(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD=20V ID=30A, RGEN=3Ω, RL=1Ω, VGS=10V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage IS=20A,VGS=0V -- Note : 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25°C , VDD=20V, VG=10V,RG=25Ω L=0.5mH, IAS=18A 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% - 2- 2019-8-20 PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Typical characteristic curve: Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 120 ID (A) 100 ID (A) 100 10V 4.5V 80 4V 80 60 60 40 3.5V 40 125℃ 25℃ 20 20 VGS=3V VDS(V) 0 0 1.0 2.0 3.0 4.0 0 5.0 VGS(V) 0 2 4 6 8 10 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current RDS(ON) (mΩ) 1.0E+02 12 VGS=4.5V IS(A) 1.0E+01 10 125℃ 1.0E+00 8 1.0E-01 25℃ 6 1.0E-02 VGS=10V 4 1.0E-03 2 0 1.0E-04 ID(A) 0 10 20 30 40 50 60 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 10 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics VGS(V) C(pF) VDS=20V ID=30A 10000 Ciss 6 1000 Coss 4 Crss 100 2 0 Qg(nC) 0 15 30 10 0 45 - 3- VDS(V) 5 10 15 20 25 30 35 40 2019-8-20 PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 8: Normalized on Resistance vs. Junction Temperature VBR(DSS) (V) 1.3 RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 Figure 9: Maximum Safe Operating Area 70 Limited by RDS(on) 0 50 100 150 200 ID(A ) 60 10μs 100 50 100μs 40 1ms 10 10ms 30 100ms DC 20 TC=25℃ Single pulse 1 -50 Figure 10: Maximum Continuous Drain Current vs. Case Temperature ID(A) 1000 Tj (℃) 0.1 0.1 10 VDS (V) 10 1 0 100 0 25 50 Tc (℃) 75 100 125 150 175 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 101 ZthJ-C(℃ /W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 10-4 10-3 TP(s) 10-2 P DM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM*ZthJC+TC 10-1 100 101 - 4- 2019-8-20 PTD4 08 0B 4 0V/60A N-Channel A dv anced Power MOSFET Test Circuit and Waveform Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms - 5- 2017-8-22 2019-8-20