GL80N03A4

GL80N03A4 R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET General Description： V DSS 30 V ID 80 A design to provide excellent RDS(ON) with low gate charge. It PD 83 W can be used in a wide variety of applications. The package R DS(ON)MAX 5.0 mΩ The GL80N03A4 uses advanced trench technology and form is TO-252, which accords with the RoHS standard. TO-252 Features：  RDS(ON)