GL80N03A4
R
○
无锡光磊电子科技有限公司
GL Silicon N-Channel Power MOSFET
General Description:
V DSS
30
V
ID
80
A
design to provide excellent RDS(ON) with low gate charge. It
PD
83
W
can be used in a wide variety of applications. The package
R DS(ON)MAX
5.0
mΩ
The GL80N03A4 uses advanced trench technology and
form is TO-252, which accords with the RoHS standard.
TO-252
Features:
RDS(ON)
很抱歉,暂时无法提供与“GL80N03A4”相匹配的价格&库存,您可以联系我们找货
免费人工找货