CS540A4

CS540A4 R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET V DSS General Description： The CS540A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be 100 V ID 30 A PD 85 W R DS(ON)type 20 mΩ used in a wide variety of applications. The package form is TO- TO-252 252, which accords with the RoHS standard. Features：  Fast Switching  Low Gate Charge and Rdson  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications：  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply Absolute （ Tc= 25℃ unless otherwise specified）： Symbol V DSS Parameter Rating Units 100 V Continuous Drain Current 30 A Continuous Drain Current T C = 100 °C 21 A Drain-to-Source Voltage ID I DM Pulsed Drain Current 120 A V GS Gate-to-Source Voltage ±20 V E AS a2 Single Pulse Avalanche Energy 260 mJ E AR a1 Avalanche Energy ,Repetitive 35 mJ I AR a1 Avalanche Current 8 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 85 W 175， –55 to 175 ℃ 300 ℃ dv/dt a3 PD T J ， T stg TL Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 1/5 CS540A4 R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET Electrical Characteristics（ Tc= 25℃ unless other wise specified）： OFF Characteristics Symbol V DSS Parameter Test Conditions Drain to Source Breakdown Voltage V GS =0V, I D =250µA ΔBV DSS /ΔT J Bvdss Temperature Coefficient Rating Min. Typ. Max. 100 -- -- I D =250uA,Reference25℃ -- 0.1 -- V DS =100V,V GS =0V,T a =25℃ -- -- 1 V DS =80V,V GS = 0V,T a =125℃ -- -- 250 Units V V/℃ I DSS Drain to Source Leakage Current µA I GSS(F) Gate to Source Forward Leakage V GS= +20V -- -- 1 µA I GSS(R) Gate to Source Reverse Leakage V GS =-20V -- -- -1 µA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance V GS =10V,I D =10A V GS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA Rating Min. Typ. Max. Units -- 20 30 mΩ 1.0 -- 3.0 V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Parameter Symbol g fs Forward Transconductance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Test Conditions V DS =5V, I D =10.0A V GS =0V,V DS =50V f=1.0MHz Rating Min. Typ. Max. 8.0 -- -- -- 2000 -- -- 300 -- -- 250 -- Units S pF Resistive Switching Characteristics Parameter Symbol t d(ON) tr t d(OFF) tf Test Conditions Turn-on Delay Time Rating Min. Typ. Max. -- 10 -- Rise Time I D =15A,V DD =50V -- 10 -- Turn-Off Delay Time V GS =10V,R G =3.0Ω -- 38 -- -- 14 -- -- 45 -- -- 12 -- -- 18 -- Fall Time Qg Total Gate Charge Q gs Gate to Source Charge Q gd Gate to Drain (“ Miller ” )Charge I D =15A,V DD =50V V GS =10V Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 2/5 Units ns nC CS540A4 R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET Source-Drain Diode Characteristics Rating Symbol Parameter Test Conditions IS Continuous Source Current (Body Diode) -- -- 30 A I SM Maximum Pulsed Current (Body Diode) -- -- 120 A V SD Diode Forward Voltage I S =30A,V GS =0V -- -- 1.5 V t rr Reverse Recovery Time I S =30A,T j = 25°C -- 66 -- ns Q rr Reverse Recovery Charge dI F /dt=100A/us,V GS =0V -- 130 -- nC Min. Typ. Max. Units Pulse width tp≤380µs,δ≤2% Parameter Symbol R θJc Junction-to-Case a1 ： Repetitive a2 ： EAS a3 ： I SD Typ. 1.8 rating; pulse width limited by maximum junction temperature condition : Tj=25℃ ,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω =30A,di/dt ≤100A/us,V DD ≤BV DS, Start T J =25℃ Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 3/5 Units ℃ /W R ○ CS540A4 GL Silicon N-Channel Power MOSFET Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 4/5 无锡光磊电子科技有限公司 CS540A4 R ○ GL Silicon N-Channel Power MOSFET ＴＥＬ：０７５５－２３０６８１１９ Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 5/5 无锡光磊电子科技有限公司