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G26N02K

G26N02K

  • 厂商:

    GOFORD(谷峰)

  • 封装:

    TO252

  • 描述:

  • 数据手册
  • 价格&库存
G26N02K 数据手册
GOFORD G26N02K N-Channel Enhancement Mode Power MOSFET Description The G26N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ ⚫ ⚫ ⚫ VDS ID (at VGS = 10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 20V 26A < 11.3mΩ < 14.1mΩ Schematic diagram ⚫ 100% Avalanche Tested ⚫ RoHS Compliant Application ⚫ Power switch ⚫ DC/DC converters TO-252 Device Package Marking Packaging G26N02K TO-252 G26N02 2500pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note3) Power Dissipation Operating Junction and Storage Temperature Range Symbol Value Unit VDS 20 V ID 26 A IDM 100 A VGS ±12 V EAS 43 mJ PD 33 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJC 3.8 ºC/W Thermal Resistance Parameter Thermal Resistance, Junction-to-Case www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1159) GOFORD G26N02K Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 20 -- -- V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V -- -- 1 μA Gate-Source Leakage IGSS VGS = ±12V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.5 0.7 0.9 V VGS = 4.5V, ID = 3A -- 9 11.3 Drain-Source On-Resistance RDS(on) VGS = 2.5V, ID = 3A -- 11 14.1 VDS=5V,ID=3A 10 -- -- -- 777 -- -- 164 -- -- 140 -- -- 26 -- -- 3 -- Forward Transconductance mΩ gFS S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg VGS = 0V, VDS = 10V, f = 1.0MHz VDD = 10V, ID = 3A, VGS = 4.5V Gate-Source Charge Qgs Gate-Drain Charge Qgd -- 5 -- Turn-on Delay Time td(on) -- 4 -- Turn-on Rise Time tr -- 28 -- Turn-off Delay Time td(off) -- 16 -- -- 26 -- Turn-off Fall Time VDD = 10V, ID = 3A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC -- -- 26 A Body Diode Voltage VSD TJ = 25ºC, ISD = 3A, VGS = 0V -- -- 1.2 V Reverse Recovery Time Trr -- 18 -- ns Reverse Recovery Charge Qrr -- 10 -- nc IS = 3A, VGS = 0V di/dt=-100A/us Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical R G 3. VDD = 20V, RG = 25Ω, L=0.5 mH, Starting TJ = 25°C 。 www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1159) GOFORD G26N02K Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1159) GOFORD G26N02K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics ID, Drain Current (A) ID, Drain Current (A) Figure 1. Output Characteristics VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 4. Drain Source On Resistance RDS(on),On-Resistance(mΩ) Vgs Gate-Source Voltage(V) Figure 3. Gate Charge VDD = 10V ID = 3A Qg Gate Charge(nC) VGS=2.5V VGS=4.5V ID-Drain Current(A) Figure 6. Source-Drain Diode Forward Capacitance(pF) Is, Reverse Drain Current (A) Figure 5. Capacitance Vds Drain-Source Voltage(V) www.gofordsemi.com TEL:0755-29961263 VSD, Source-to-Drain Voltage (V) FAX:0755-29961466 (A1159) GOFORD G26N02K Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 8. Safe Operation Area VGS = 4.5V ID = 3A ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance TJ, Junction Temperature (ºC) VDS, Drain-Source Voltage(V) ZthJC, Thermal Impedance (ºC/W) Figure 9. Normalized Maximum Transient Thermal Impedance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA Pulse Width (s) www.gofordsemi.com TEL:0755-29961263 FAX:0755-29961466 (A1159) GOFORD G26N02K TO-252 Package Information Symbol A A1 A2 b b3 c D D1 E E1 e H L L1 L2 L3 L4 L5 θ www.gofordsemi.com Dimensions in Millimeters MIN. NOM. MAX. 2.2 2.3 2.4 0 0.2 0.97 1.07 1.17 0.68 0.78 0.9 5.2 5.33 5.5 0.43 0.53 0.63 5.98 6.1 6.22 5.30REF 6.4 6.6 6.8 4.63 2.286BSC 9.4 10.1 10.5 1.38 1.5 1.75 2.90REF 0.51BSC 0.88 1.28 0.5 1 1.65 1.8 1.95 0° 8° TEL:0755-29961263 FAX:0755-29961466 (A1159)
G26N02K 价格&库存

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