SM6107PSUC-TRG

SM6107PSU ® P-Channel Enhancement Mode MOSFET Features • • • Pin Description Drain 4 -60V/-26A, RDS(ON)= 40mΩ(max.) @ VGS=-10V 2 RDS(ON)= 54mΩ(max.) @ VGS=-4.5V 1 Gate 3 Source Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHS Compliant) • D 100% UIS Tested Applications • • • G DC/DC Converter. Power Management. Load Switch. S P-Channel MOSFET Ordering and Marking Information Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM6107PS Assembly Material Handling Code Temperature Range Package Code SM6107PS U : XXXXX - Lot Code SM6107PS XXXXX Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 1 www.sinopowersemi.com SM6107PSU ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings V DSS Drain-Source Voltage -60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C -13 A TJ TSTG IS IAS Diode Continuous Forward Current a a EAS I DP b Avalanche Current, Single pulse L=0.5mH -17 A Avalanche Energy, Single pulse L=0.5mH 72 mJ Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC TC =25°C -80 Continuous Drain Current PD Maximum Power Dissipation Thermal Resistance-Junction to Ambient c TC =25°C -26 TC =100°C -16 TC =25°C 54 TC =100°C 21 Thermal Resistance-Junction to Case ID R θJA d Note Note Note Note Storage Temperature Range V 2.3 TA=25°C -5.3 TA=70°C -4.2 TA=25°C 2.2 TA=70°C 1.4 Steady State o 55 A W °C/W A W °C/W o a：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T j=25 C). b：Pulse width limited by max. junction temperature. c：Wire limited. 2 d：R θJA steady state t=999s. RθJA is measured with the device mounted on 1in , FR-4 board with 2oz. Copper. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 2 www.sinopowersemi.com SM6107PSU ® Electrical Characteristics Symbol (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions Min. Typ. Max. Unit -60 - - V - - 1 - - -30 -1.3 -1.8 -2.3 V Static Characteristics BVDSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current VGS(th) I GSS RDS(ON) e VGS=0V, I DS=-250µA VDS=-48V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA VGS=-10V, I DS=-20A - 32 40 mΩ VGS=-4.5V, IDS=-20A - 40 54 mΩ ISD=-1A, VGS=0V - -0.7 -1 V - 23 - ns - 22 - nC - 8 16 Ω - 1416 1840 - 142 - - 85 - - 10 18 - 9 16 - 88 158 - 42 76 - 32 45 - 3.6 - - 8.3 - Drain-Source On-state Resistance Diode Characteristics VSD e Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics f RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crs s Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,f=1MHz VGS=0V, VDS=-30V, Frequency=1.0MHz VDD =-30V, R L =30Ω, IDS =-1A, VGEN =-10V, RG =6Ω Turn-off Fall Time Gate Charge Characteristics Qg ISD=-20A, dlSD/dt=100A/µs pF ns f Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge VDS=-30V, VGS=-10V, IDS =-20A nC Note e：Pulse test; pulse width≤300µs, duty cycle≤2%. Note f：Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 3 www.sinopowersemi.com SM6107PSU ® Typical Operating Characteristics Power Dissipation Drain Current 28 60 24 -ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 10 20 16 12 8 4 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 TC=25 C,VG=-10V 0 20 Tj - Junction Temperature (°C) 60 80 100 120 140 160 Tj - Junction Temperature (°C) Thermal Transient Impedance Safe Operation Area 300 Normalized Transient Thermal Resistance 3 100 ds (o n )L im it 100µs R -ID - Drain Current (A) 40 10 1ms 10ms 1 DC o TC=25 C 0.1 0.1 1 10 100 300 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 RθJC :2.3 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 Duty = 0.5 1 4 www.sinopowersemi.com SM6107PSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 80 70 VGS=-4.5,-5,-6,-7 ,-8,-9,-10V 70 RDS(ON) - On - Resistance (mΩ) 60 -ID - Drain Current (A) -4V 50 40 -3.5V 30 20 -3V 10 60 50 VGS=-4.5V 40 VGS=-10V 30 20 -2.5V 0 0 1 2 3 4 5 10 6 0 10 20 30 40 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 90 Normalized Threshold Voltage (V) RDS(ON) - On - Resistance (mΩ) 80 70 60 50 40 30 2 3 4 5 6 7 8 9 -VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 60 IDS=-250µA IDS=-20A 20 50 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM6107PSU ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.5 80 VGS = -10V -IS - Source Current (A) Normalized On Resistance IDS = -20A 2.0 1.5 1.0 10 o T j=150 C o T j=25 C 1 0.5 o RON@Tj=25 C: 32mΩ 0.0 -50 -25 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge V DS=-30V 9 -VGS - Gate-Source Voltage (V) 1500 Ciss 1200 900 600 300 1.5 10 Frequency=1MHz 1800 C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 2100 0 0.3 Coss I DS=-20A 8 7 6 5 4 3 2 1 Crss 0 8 16 24 32 0 40 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 0 8 16 24 32 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM6107PSU ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01Ω tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT td(off) tf VGS 10% VGS RG VDD tp 90% VDS Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 7 www.sinopowersemi.com SM6107PSU ® Package Information TO-252-3 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252-3 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 6.00 0.150 E1 3.81 e 2.29 BSC 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 0.236 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0° 0° 8° 8° 2.286 1.5 MIN. 4.572 UNIT: mm Note : Follow JEDEC TO-252 . Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 8 www.sinopowersemi.com SM6107PSU ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.0±2.00 50 MIN. TO-252-3 T1 C d 16.4+2.00 13.0+0.50 -0.00 -0.20 1.5 MIN. P0 P1 P2 D0 D1 4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 -0.00 1.5 MIN. D W E1 F 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05 T A0 B0 K0 0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 9 www.sinopowersemi.com SM6107PSU ® Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 10 www.sinopowersemi.com SM6107PSU ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2014 11 www.sinopowersemi.com SM6107PSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness