KND41100A

KIA 2.0A，1000V N-CHANNEL MOSFET KNX41100A SEMICONDUCTORS 1.Product Features  RoHS Compliant  RDS(ON),typ.=9.6Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode 2.Applications  Adaptor  Charger  SMPS Standby Power 3. Pin configuration http://www.kiaic.com/ 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0.Apr. 2021 KIA 2.0A，1000V N-CHANNEL MOSFET KNX41100A SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KND41100A TO-252 KIA KNP41100A TO-220 KIA KNF41100A TO-220F KIA 5. Absolute maximum ratings (TC= 25 ºC , unless otherwise specified) Symbol Parameter Ratings Unit VDSS Drain-to-Source Voltage TJ=25 ºC 1000 VGSS Gate-to-Source Voltage ±30 ID Continuous Drain Current @ Tc=25 ºC 2.0 IDM Pulsed Drain Current at VGS=10V Limited by TJmax 8.0 EAS Single Pulse Avalanche Energy(VDD=50V) 80 mJ PD Maximum Power Dissipation 60 W TJmax Max. Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 V A ºC 6. Thermal characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction-to-Case 2.08 Unit ºC /W RθJA Thermal Resistance, Junction-to-Ambient http://www.kiaic.com/ 2 of 5 75 Rev 1.0.Apr. 2021 KIA 2.0A，1000V N-CHANNEL MOSFET KNX41100A SEMICONDUCTORS 7. Electrical characteristics (TJ=25°C,unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-to-Source Breakdown Voltage VGS=0V, ID=250uA 1000 -- -- V IDSS Drain-to-Source Leakage Current VDS=1000V, VGS=0V -- -- 1 uA IGSS Gate-to-Source Leakage Current VGS=±30V, VDS=0V -100 -- 100 nA RDS(ON) Drain-to-Source ON Resistance VGS=10V, ID=1.0A 9.6 12 Ω VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250uA 2.0 -- 4.0 V -- 370 -- -- 4.0 -- -- 40 -- -- 15 -- -- 2.1 -- -- 6.0 -- -- 8.0 -- -- 6.0 -- -- 36 -- Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain (Miller) Charge td(ON) Turn-on Delay Time trise td(OFF) Rise Time Turn-Off Delay Time VGS=0V, VDS=25V, f=1.0MHZ VDD=500V, ID=2.0A, VGS=10V VDD=500V, ID=2.0A, RG=12Ω VGS= 10V (Resistive Load) pF nC nS tfall Fall Time -- 15 -- ISD Continuous Source Current -- -- 2 A VSD Forward Voltage -- - 1.5 V -- 320 -- ns -- 1.0 -- uC trr Reverse recovery time Qrr Reverse recovery charge http://www.kiaic.com/ IS=2.0A, VGS=0V VGS=0V ,IF=2.0A, diF/dt=-100A/μs 3 of 5 Rev 1.0.Apr. 2021 KIA 2.0A，1000V N-CHANNEL MOSFET KNX41100A SEMICONDUCTORS 8.Test circuits and waveforms http://www.kiaic.com/ 4 of 5 Rev 1.0.Apr. 2021 KIA 2.0A，1000V N-CHANNEL MOSFET KNX41100A SEMICONDUCTORS http://www.kiaic.com/ 5 of 5 Rev 1.0.Apr. 2021