MCR100-8W

MCR100-8W FS 1.0A Sensitive Gate SCRs Product Summary Symbol Value Unit IT(RMS) 1.0 A VDRM VRRM 600 / 800 V IGT 100 μA Feature Application With high ability to withstand the shock loading of large current, Provide high dv/dt rate with strong resistance to electromagnetic interference. Power charger, T-tools, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram SOT-223-3L Marking 100-8 XXXX www.fuxinsemi.com Page 1 Ver2.1 MCR100-8W FS 1.0A Sensitive Gate SCRs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 1.0 A ITSM 12 A I2t 0.72 A2s dIT/dt 50 A/μs IGM 0.5 A PG(AV) 0.1 W Junction Temperature TJ -40 ~ +110 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD Test Condition VD =12V IT=10mA Tj =25℃ VD =1/2VDRM Tj =110℃ Value Unit Min Max - 100 μA - 0.8 V 0.2 - V latching current IL VD =12V IG=0.5mA - 5 mA Holding current IH RGK=1kΩ Tj =25℃ - 4 mA 50 - V/μs - 1.7 V Tj=25℃ - 5 μA Tj=110℃ - 0.1 mA Critical-rate of rise of commutation voltage dVD/dt VD=2/3VDRM Gate Open Tj =110℃ STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM ITM =2A tp=380μs VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case TYP. 20 ℃/W Rth(j-a) Junction to ambient TYP. 60 ℃/W Page 2 Ver2.1 MCR100-8W FS 1.0A Sensitive Gate SCRs Typical Characteristics FIG1 Maximum power dissipation versus RMS on-state current FIG2 RMS on-state current versus case temperature 1.2 IT(RMS) 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 P(w) 0 0 IT(RMS) (A) 0.4 0.6 0.2 0.8 1.0 Tc (℃) 0 0 25 50 75 100 125 FIG4 On-state characteristics (maximum values) FIG3 Surge peak on-state current versus number of cycles ITM (A) ITSM (A) 8 tp=10ms One cycle 12 Tj=Tjmax 9 1 6 3 Tj=25℃ 0 1 10 Number of cycles 100 1000 FIG5 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp