MS60N03

www.msksemi.com MS60N03 Semiconductor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested 30V 60A ＜9.0mohm ＜11.0mohm Compiance Schematic diagram General Description ● Trench Power LV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● High current load applications ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-252 ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V 60 TC=25℃ ID Drain Current IDM TC=25℃ Total Power Dissipation A 35 TC=100℃ Pulsed Drain Current A Unit 150 A 34 W 17 W PD TC=100℃ Single Pulse Avalanche Energy B EAS 80 mJ Thermal Resistance Junction-to-Case C RθJC 4.4 ℃/ W TJ ,TSTG -55～+175 ℃ Junction and Storage Temperature Range www.msksemi.com MS60N03 Semiconductor Compiance ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 Zero Gate Voltage Drain Current IDSS Typ Max Units Static Parameter V 1 TJ=25℃ VDS=30V,VGS=0V μA 5 TJ=55℃ IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) Gate-Body Leakage Current Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ±100 nA 1.5 2.5 V VGS= 10V, ID=15A 6.5 9.0 VGS= 4.5V, ID=15A 8.6 11.0 IS=15A,VGS=0V 0.85 1.2 V 50 A 1.0 mΩ IS Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 114 Total Gate Charge Qg 28 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Charge Qrr 920 VDS=15V,VGS=0V,f=1MHZ 198 pF Switching Parameters VGS=10V,VDS=15V,ID=50A 7 nC 5 25 IF=20A, di/dt=100A/us Reverse Recovery Time trr 26 Turn-on Delay Time tD(on) 8 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time tf VGS=10V,VDD=20V, ID=2A,RL=1Ω RGEN=3Ω 15 ns 27 7 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω C. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. www.msksemi.com MS60N03 Semiconductor Compiance ■ Typical Performance Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. Drain-Source on Resistance Figure2. Transfer Characteristics Figure4. Gate Charge Figure6. Drain-Source on Resistance www.msksemi.com MS60N03 Semiconductor Figure7. Safe Operation Area Compiance Figure8. Switching wave www.msksemi.com MS60N03 Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c V L3 h A1 L4 L E φ L2 L1 D2 b e Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. REEL SPECIFICATION P/N MS60N03 PKG QTY TO-252 2500 www.msksemi.com MS60N03 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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