TW0115SR-Y
N-Channel Enhancement Mode Power MOSFET
⚫
⚫
Features
General Description
VDS = 100V,
• DC-DC Converters
ID = 15.2A
• DC-AC Inverters
RDS(ON) @VGS= 10V, TYP 68mΩ
• Motor Drives
RDS(ON) @VGS= 4.5V, TYP 75mΩ
⚫
Pin Configurations
TO252
⚫
Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Continuous) *AC
Drain Current (Pulse)
TC=25°C
15.2
ID
TC=100°C
*B
TC=25°C
Power Dissipation
Operating Temperature/ Storage Temperature
⚫
A
9.6
IDM
50
A
PD
42
W
TJ/TSTG
-55~150
℃
Symbol
Maximum
Unit
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *AC
t≤10s
RthJA
60
Maximum Junction-to-Case (Drain)
Steady State
RthJC
3
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°C/W
TW0115SR-Y
⚫
Electrical Characteristics @TA=25℃ unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID= 250μA
100
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
--
--
1
μA
VGS = VDS, IDS= 250μA
1
1.7
2.5
V
VGS= 20V, VDS=0V
--
--
100
nA
RDS(on)
VGS = 10V, ID = 5A
--
68
90
mΩ
RDS(on)
VGS = 4.5V, ID = 3A
--
75
100
mΩ
ISD= 1A , VGS=0V
--
0.74
1.2
V
TC =25°C
--
--
15.2
A
--
19.7
--
nC
--
3.5
--
nC
--
4.2
--
nC
--
8
--
ns
--
11
--
ns
--
17
--
ns
Gate Threshold Voltage
VGS(TH)
Gate Leakage Current
IGSS
Drain-Source On-state Resistance
Diode Forward Voltage
VSD
Diode Forward Current *AC
IS
Switching
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay Time
td ( on )
VGS=10V, VDS=50V, ID=6.6A
VGEN=10V, VDD=50V,
Turn-on Rise Time
tr
Turn-off Delay Time
td( off )
Turn-Off Fall Time
tf
--
6
--
ns
Input Capacitance
Ciss
--
855
--
pF
Output Capacitance
Coss
--
84
--
pF
Reverse Transfer Capacitance
Crss
--
41
--
pF
RL=9.6Ω,RG=1Ω,
ID=5.2A
Dynamic
VDS=50V,VGS=0V, f=1.0MHz
2
A: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given
application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
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2
TW0115SR-Y
⚫
Typical Performance Characteristics((TJ = 25 °C, unless otherwise noted))
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3
TW0115SR-Y
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4
TW0115SR-Y
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5
TW0115SR-Y
⚫
Package Information
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6
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