HSU28N15

HSU28N15 N-Ch 150V Fast Switching MOSFETs Product Summary Description The HSU28N15 is the highest performance trench N-ch MOSFETs with extreme high cell density, VDS 150 V which provide excellent RDSON and gate charge RDS(ON),max 46 mΩ ID 30 A for most of the synchronous buck converter applications. The HSU28N15 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Configuration l l l l Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1 30 A Continuous Drain Current, VGS @ 10V 1 22 A 60 A 216 mJ 38 A 115 W Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current PD@TC=25℃ Total Power Dissipation 3 3 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 55 ℃/W --- 1.3 ℃/W 1 HSU28N15 N-Ch 150V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 150 --- --- V Static Drain-Source On-Resistance 2 VGS=10V , ID=20A --- 35 46 mΩ Static Drain-Source On-Resistance 2 VGS=4.5V , ID=20A --- 37 50 mΩ VGS=VDS , ID =250uA 1.2 --- 2.5 V Gate Threshold VGS=10V Voltage , ID=10A --- --- IDSS 92 mW Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25℃ --- --- 1 VDS=120V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 55 --- S Qg Total Gate Charge (4.5V) --- 40 --- Qgs Gate-Source Charge --- 10 --- Qgd Gate-Drain Charge --- 21 --- Turn-On Delay Time --- 18 --- Td(on) Tr Td(off) Tf VDS=75V , VGS=4.5V , ID=10A Rise Time VDD=50V , VGS=4.5V , RG=3.3Ω --- 20 --- Turn-Off Delay Time ID=10A --- 65 --- uA nC ns Fall Time --- 15 --- Ciss Input Capacitance --- 3755 --- Coss Output Capacitance --- 207 --- Crss Reverse Transfer Capacitance --- 160 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 30 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V VDS=25V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions 1,5 Continuous Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , --- 35 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 120 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.3mH,IAS=38A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU28N15 N-Ch 150V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 2.5 Normalized On Resistance 1.8 2.0 Normalized VGS(th) (V) 1.4 1.5 1 1.0 0.6 0.2 0.5 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 50 100 150 Fig.6 Normalized R DSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 TJ , Junction Temperature (℃) Ver 2.0 3 HSU28N15 N-Ch 150V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% Td(on) Tr Ton Td(off) VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD BVDSS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Ver 2.0 4 HSU28N15 N-Ch 150V Fast Switching MOSFETs Ordering Information Part Number HSU28N15 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5