15N10

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 15N10 N-Channel Enhancement Mode Power MOSFET TO-252 Description The 15N10 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a S Battery protection or in other switching application. G Equivalent Circuit General Features VDSS RDS(ON) @10V (typ) 100V 111 mΩ 135 D ID G 5A 15A High power and current handing capability S MARKING Lead free product is acquired Surface mount package 15N10 Application TFYWCP Battery switch DC/DC converter Y :year code W :week code Absolute Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous TC=25°C Drain Current-Continuous TC=100°C Drain Current-Pulsed Limit Unit 100 V ±20 V 15 A 10.0 A 36 A 30 W 15 W ID (Note 1) IDM Maximum Power Dissipation TC=25°C Maximum Power Dissipation TC=100°C PD TJ,TSTG Operating Junction and Storage Temperature Range -55 To 175 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) www.sztuofeng.com RθJC 1 5 /W Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 15N10 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 107 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.2 1.8 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A - 0.120 0.111 Ω Drain-Source On-State Resistance RDS(ON) VGS=4.5V, I D=8A - 0.130 0.136 Ω RDS(ON) VGS=2.0V, I D=5A - 0.140 0.151 Ω gFS VDS=25V,ID =10A 3.5 - - S - 690 - PF - 120 - PF - 90 - PF - 11 - nS Off Characteristics On Characteristics (Note 3) Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω - 7.4 - nS td(off) VGS=10V,RG=2.5Ω - 35 - nS - 9.1 - nS - 15.5 - 3.2 - nC - 4.7 - nC - - 1.2 V - - 12 A TJ = 25°C, IF =9.6A - 21 nS (Note3) - 97 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=3A, VGS=10V nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=9.6A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production www.sztuofeng.com 2 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 15N10 Typical Electrical and Thermal Characteristics (Curves) ID- Drain Current (A) Normalized On-Resistance 10A TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current www.sztuofeng.com Figure 6 Source- Drain Diode Forward 3 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET C Capacitance (pF) 15N10 TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.sztuofeng.com 4 Mar ,2018 V1.0 SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD N -CHANNEL ENHANCEMENT MODE POWER MOSFET 15N10 Package Information TO-252-2L E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A TO-252-3 RECOMMENDED LAND PATTERN MILLIMETERS MIN. 2.18 INCHES MAX. MIN. 2.39 0.086 0.50 0.094 0.005 0.89 0.020 0.035 0.215 b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 0.245 D 5.33 6.22 0.210 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 0 0.040 1.02 0° www.sztuofeng.com 6.8 MIN. 6.6 3 MIN. 0.090 BSC H L4 6.25 MIN. MAX. 0.13 A1 b VIEW A 8° 0° 8° 5 2.286 1.5 MIN. 4.572 UNIT: mm Fe ,2018 V1.1