MBRB30100CT

MBR30100CT MBRB30100CT MBR30100CT-1 Technical Data Data Sheet N0039, Rev. C MBR30100CT/MBRB30100CT/MBR30100CT-1 SCHOTTKY RECTIFIER Features              Applications 175 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request     Switching power supply Converters Free-Wheeling diodes Reverse battery protection MBR30100CT MBRB30100CT MBR30100CT-1 TO-220AB D2PAK TO-262 Maximum Ratings: Characteristics Symbol Condition Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - Average Rectified Forward Current IF (AV) Peak Repetitive Forward Current(Per Leg) Peak One Cycle Non-Repetitive Surge Current(Per Leg) IFRM IFSM 50% duty cycle @Tc=133°C, rectangular wave form Rated VR square wave, 20KHz TC = 133°C Max. Units 100 V 15(Per Leg) 30(Per Device) A 20 A 200 A 8.3ms, Half Sine pulse  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  MBR30100CT MBRB30100CT MBR30100CT-1 Technical Data Data Sheet N0039, Rev. C Electrical Characteristics: Characteristics Symbol Forward Voltage Drop (Per Leg)* VF1 VF2 Reverse Current (Per Leg)* IR1 IR2 Junction Capacitance(Per Leg) CT Series Inductance (per leg) Voltage Rate of Change LS dv/dt Condition @ 15 A, Pulse, TJ = 25 C @ 30 A, Pulse, TJ = 25 C @ 15 A, Pulse, TJ = 125 C @ 30 A, Pulse, TJ = 125 C @VR = rated VR TJ = 25 C @VR = rated VR TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz Measured lead to lead 5 mm from package body - Typ. Max. Units 0.78 0.90 0.67 0.77 0.85 1.05 0.70 0.85 0.003 1.00 mA 2 15.0 mA 380 500 pF 8.0 - nH - 10,000 V/s V V * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Typical Thermal Resistance Junction to Case Typical Thermal Resistance, Case to Heat Sink Case Style Symbol Condition Specification Units TJ Tstg - -55 to +175 -55 to +175 C C RJC DC operation 1.5 C/W RJA DC operation 50 C/W RCS Mounting surface, smooth and greased TO-220AB D2PAK TO-262 0.50 C/W Tube Specification Tube Specification(TO-220AB/TO-262) Device Package Weight Shipping MBR30100CT TO-220AB 1.8g 50pcs / tube MBRB30100CT D²PAK 1.85g 800pcs / reel MBR30100CT-1 TO-262 1.85g 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  MBR30100CT MBRB30100CT MBR30100CT-1 Technical Data Data Sheet N0039, Rev. C Ratings and Characteristics Curves TJ=125℃ TJ=25℃ TJ=25℃ Fig.2-Typical Reverse Characteristics Fig.1-Typical Junction Capacitance TJ=125℃ TJ=25℃ Fig.3-Typical Instantaneous Forward Voltage Characteristics Marking Diagram Where XXXXX is YYWWL MBR B 30 100 CT-1 SSG YY WW L = Device Type = Package type = Forward Current (30A) = Reverse Voltage (100V) = Configuration = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  MBR30100CT MBRB30100CT MBR30100CT-1 Technical Data Data Sheet N0039, Rev. C Carrier Tape Specification D2PAK Millimeters Min. Max. Symbol A 10.70 10.90 B 16.03 16.23 C 5.11 5.31 d 1.45 1.65 E 1.65 1.85 F 11.40 11.60 P0 3.90 4.10 P 15.90 16.10 P1 1.90 2.10 W 23.90 24.30 Mechanical Dimensions TO-220AB Symbol A A1 A2 b b1 c D D1 E e e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Millimeters Min. 4.42 1.17 2.52 0.71 1.17 0.31 14.94 8.85 10.01 4.98 6.04 12.7 3.56 3.74 2.54  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Typical 4.57 1.27 2.69 0.81 1.27 0.38 15.24 9.00 10.16 2.54 5.06 6.24 13.56 3.5 3.84 2.74 7° 3° 4° Max. 4.72 1.37 2.89 0.96 1.37 0.61 15.54 9.15 10.31 5.18 6.44 13.80 3.96 4.04 2.94 MBR30100CT MBRB30100CT MBR30100CT-1 Technical Data Data Sheet N0039, Rev. C Mechanical Dimensions D2PAK Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 Millimeters Min. 4.47 0 2.59 0.71 1.17 0.31 1.17 8.50 6.40 10.01 7.6 9.98 Typical Max. 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.31 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 14.6 2.00 1.12 1.30 0.25BSC 5° 4° 0 e3 4.85 0.25 2.89 0.96 1.37 0.61 1.37 8.90 15.6 2.74 1.42 2.20 8° 4° Mechanical Dimensions TO-262 Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Millimeters Min. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Typical 4.70 0.10 2.69 0.81 1.27 0.38 1.27 Max. 4.85 0.25 2.89 0.96 0.61 1.37 8.70 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 15.6 2.70 1.40 2.20 8° Technical Data Data Sheet N0039, Rev. C MBR30100CT MBRB30100CT MBR30100CT-1 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 