RB520S-30-MS

www.msksemi.com RB520S-30-MS Semiconductor Compiance PINNING Silicon Epitaxial Planar Schottky Barrier Diode PIN for low current rectification and high speed switching applications DESCRIPTION 1 Cathode 2 Anode 2 1 Features • Extremely small surface mounting type SOD-523 • High reliability Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VR 30 V Mean Rectifying Current IF(AV) 200 mA Peak Forward Surge Current (60 Hz for 1 Cyc.) IFSM 1 A Tj 125 O C Tstg - 40 to + 125 O C Symbol Max. Unit Forward Voltage at IF = 200 mA VF 0.6 V Reverse Current at VR = 10 V IR 1 µA Reverse Voltage Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Note: ESD sensitive product handling required. www.msksemi.com RB520S-30-MS Semiconductor Forward Characteristics 1000 Reverse Characteristics 1000 100 REVERSE CURRENT IR (uA) (mA) IF FORWARD CURRENT o Ta=100 C 100 10 1 0.1 0.01 0 100 200 300 FORWARD VOLTAGE 400 VF 500 o Ta=25 C 1 0 5 10 (mV) 15 20 25 30 REVERSE VOLTAGE V (V) R Capacitance Characteristics 100 10 0.1 600 Compiance Power Derating Curve 120 Ta=25℃ f=1MHz PD(mW) 30 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT(pF) 100 10 80 60 40 3 20 1 0 5 10 REVERSE VOLTAGE V 15 R (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE T 100 a 125 (℃) www.msksemi.com RB520S-30-MS Semiconductor PACKAGE MECHANICAL DATA Symbol A A1 b c D E E1 E2 L 0 Dimensions In Millimeters Min Max 0.510 0.770 0.500 0.700 0.250 0.350 0.080 0.150 0.750 0.850 1.100 1.300 1.500 1.700 0.200 REF 0.010 0.070 7° REF Dimensions In Inches Min Max 0.020 0.031 0.020 0.028 0.010 0.014 0.003 0.006 0.030 0.033 0.043 0.051 0.059 0.067 0.008 REF 0.001 0.003 7° REF REEL SPECIFICATION P/N RB520S-30-MS PKG SOD-523 QTY 3000 Compiance RB520S-30-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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