SE1SS400

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE1SS400 Switching diode Revision:A Features ● Ultra small mold type. (EMD2) ● High reliability. . Applications ● High speed switching Construction ● Silicon epitaxial planer Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) VRM 90 V Reverse voltage (DC) VR 80 V Forward voltage (repetitive peak) IFM 225 mA Average rectified forward current Io 100 mA Isurge 500 mA Junction temperature Tj 125 ℃ Storage temperature Tstg -55 to +125 ℃ Surge current （t=1s） Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF — — 1.2 V IF =100mA Reverse current IR — — 0.1 uA VR =80V Capacitance between terminal Ct — — 3 pF VR=0.5V , f=1MHz Reverse recovery time trr — — 4 ns VR=6V , IF=10mA , RL=100Ω SE1SS400 z Please pay attention to static electricity when handling. ShangHai Sino-IC Microelectronics Co., Ltd. 2. SE1SS400 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website:http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 3.