山东晶导微电子股份有限公司
DS12W THRU DS120W
Jingdao Microelectronics co.LTD
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 1.0 A
PINNING
PIN
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: DS12W
---S12
DS14W
---S14
DS16W
---S16
DS18W
---S18
DS110W ---S110
DS112W ---S112
DS115W ---S115
DS120W ---S120
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
Parameter
DS12W
DS14W
DS16W
DS18W
DS110W
DS112W
DS115W
DS120W
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
20
40
60
80
100
120
150
200
V
Maximum RMS voltage
V RMS
14
28
42
56
70
84
105
140
V
Maximum DC Blocking Voltage
V DC
20
40
60
80
100
120
150
200
V
Maximum Average Forward Rectified Current
I F(AV)
1.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I FSM
25
A
Max Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
T a = 25°C
at Rated DC Reverse Voltage
T a =100°C
Typical Junction Capacitance
Typical Thermal Resistance
(1)
VF
0.55
0.3
10
IR
Cj
Storage Temperature Range
0.85
0.90
V
0.2
5
0.1
2
mA
110
(2)
Operating Junction Temperature Range
0.70
80
pF
RθJA
100
°C/W
Tj
-55 ~ +150
°C
T stg
-55 ~ +150
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2020.05
SOD123FL-S-DS12W~DS120W-1A200V
Page 1 of 3
山东晶导微电子股份有限公司
DS12W THRU DS120W
Jingdao Microelectronics co.LTD
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
50
75
100
125
150
Instaneous Reverse Current ( μA)
Fig.1 Forward Current Derating Curve
10 4
10 3
T J =100°C
10 2
T J =25°C
10 1
10 0
0
80
100
Fig.4 Typical Junction Capacitance
500
10
1.0
DS12W/DS14W
DS16W
DS18W/DS112W
DS115W/DS120W
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
T J =25°C
200
100
50
DS12W/DS14W
20
DS16W-DS120W
10
1.8
0.1
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Fig.6- Typical Transient Thermal Impedance
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
Junction Capacitance ( pF)
20
10
100
Transient Thermal Impedance( °C /W)
Instaneous Forward Current (A)
Fig.3 Typical Forward Characteristic
Peak Forward Surage Current (A)
60
Percent of Rated Peak Reverse Voltage(%)
Case Temperature (°C)
1000
100
10
Number of Cycles at 60Hz
2020.05
40
20
1
0.01
0.1
1
10
100
t, Pulse Duration(sec)
www.sdjingdao.com
Page 2 of 3
山东晶导微电子股份有限公司
DS12W THRU DS120W
Jingdao Microelectronics co.LTD
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123FL
∠ALL ROUND
C
A
∠ALL ROUND
VM
D
E
A
g
Top View
mil
Bottom View
A
C
D
E
e
g
HE
max
1.1
0.20
2.9
1.9
1.1
0.9
3.8
min
0.9
0.12
2.6
1.7
0.8
0.7
3.5
max
43
7.9
114
75
43
35
150
min
35
4.7
102
67
31
28
138
UNIT
mm
1.2
(47)
1.2
(47)
2.0
(79)
Marking
Unit: mm
(mil)
2020.05
∠
7°
The recommended mounting pad size
1.2
(47)
g
pad
e
E
A
pad
HE
2005262B8
Type number
Marking code
DS12W
S12
DS14W
S14
DS16W
S16
DS18W
S18
DS110W
S110
DS112W
S112
DS115W
S115
DS120W
S120
Page 3 of 3
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