US1BW

山东晶导微电子股份有限公司 US1AW THRU US1MW Jingdao Microelectronics co.LTD SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • High efficiency • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg/0.00053oz DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: US1AW~US1DW: USL US1GW: USM US1JW~US1MW: USH Simplified outline SOD-123FL and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols Parameter US1AW US1BW US1DW US1GW US1JW US1KW US1MW Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Maximum Reverse Recovery Time （1） Typical Junction Capacitance Typical Thermal Resistance （3） Operating and Storage Temperature Range 1.3 1.65 5 100 IR t rr （2） 1.0 μA 75 50 V ns Cj 15 pF RθJA 85 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）Measured at 1 MHz and applied reverse voltage of 4 V D.C （3）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2018.12 SOD123FL-U-US1AW~US1MW-1A1KV Page 1 of 3 山东晶导微电子股份有限公司 US1AW THRU US1MW Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Peak Forward Surage Current (A) Instaneous Forward Current (A) 10 T J =25°C 1.0 US1AW~US1DW US1GW US1JW~US1MW 0.01 0.001 0 0.5 1.0 1.5 2.0 100 120 140 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 2.5 10 100 Number of Cycles Fig.5- Typical Transient Thermal Impedance 100 Fig.6 Typical Junction Capacitance Junction Capacitance ( pF) Transient Thermal Impedance（ °C /W） 80 30 10 100 T J=25°C 10 1 0.1 1 10 100 0.1 1.0 10 100 Reverse Voltage (V) t, Pulse Duration（sec） 2018.12 60 35 Instaneous Forward Voltage (V) 1 0.01 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Fig.3 Typical Forward Characteristics 0.1 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 US1AW THRU US1MW Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm g pad e E A pad HE 7° The recommended mounting pad size Marking Type number 1.2 (47) ∠ 2.0 (79) Marking code US1AW 1.2 (47) US1BW USL 1.2 (47) US1DW US1GW USM US1JW US1KW Unit： mm (mil) 2018.12 JD812184B6 USH US1MW Page 3 of 3