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DSS310

DSS310

  • 厂商:

    HIGHDIODEC(海德)

  • 封装:

    SOD-123FL-2

  • 描述:

    直流反向耐压(Vr):100V;平均整流电流(Io):3A;正向压降(Vf):850mV @ 3A;

  • 数据手册
  • 价格&库存
DSS310 数据手册
DSS32 THRU DSS320 HD FL 50 SOD-1 23FL Plastic-Encapsulate Diodes Features ●Io 3A SOD-1 23FL ●VRRM 20V-200V ●High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● DSS32-DSS320 : S32-S320 Item Symbol Unit Repetitive Peak Reverse Voltage DSS3 Test Conditions 2 3 4 5 6 8 10 15 20 VRRM V 20 30 40 50 60 80 100 150 200 V RMS V 14 21 28 35 42 56 70 105 140 Average Forward Current IF(AV) A Surge(Non-repetitive)Forward Current IFSM A TJ ℃ TSTG ℃ Maximum RMS Voltage Junction Temperature Storage Temperature 60HZ Half-sine wave, Resistance 3.0 load, TL(Fig.1) 60Hz Half-sine wave ,1 cycle , Ta =25℃ 70 -55~+125 -55~+150 -55 ~ +150 Electrical Characteristics (T =25℃ Unless otherwise specified) Item Peak Forward Voltage Peak Reverse Current Thermal Resistance(Typical) Symbol Unit VF IRRM1 IRRM2 RθJ-A RθJ-L Test Condition IF =3.0A V mA ℃/ W VRM=VRRM DSS3 2 3 4 0.55 5 6 0.7 8 10 15 0.85 0.95 Ta =25℃ 0.5 0.1 Ta =100℃ 10 5.0 Between junction and ambient 701) Between junction and terminal 251) 20 Notes: (1) Thermal resistance between junction and ambient and between junction and lead mounted on P.C.B with 3mm*3mm copper pad areas. High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 3.0 DSS32-DSS34 90 DSS35-DSS320 2.5 8.3ms Single Half Sine Wave JEDEC Method 80 2.0 70 1.5 60 1.0 50 Single Phase Half Wave 60Hz Resistive Load 0.5 40 0 0 25 75 50 125 100 1 150 TL(℃ ) 10 20 100 Number of Cycles FIG.4:TYPICAL REVERSE CHARACTERISTICS FIG.3: TYPICAL FORWARD CHARACTERISTICS 100 IR(mA) IF(A) 2 TJ=25℃ Pulse width=300us 1% Duty Cycle 100 DSS32-36 DSS38-320 10 10 Tj=100℃ 1.0 1.0 0.1 DSS32-DSS34 DSS35-DSS36 DSS38-DSS310 DSS315-DSS320 0.1 0.01 Tj=25℃ 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF(V) 0 20 40 High Diode Semiconductor 60 80 100 Voltage(%) 2 SOD-1 23FL 1.8± 0.1 1.0 ±0.15 Cathode Band Top View 1.3± 0.1 0.12-0.20 2.8 ±0.15 0.8±0.1 3.7 ±0.15 Dimensions in millimeters SOD-1 23FL 1.4 2.85 1.2 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOD-123FL FIG : CONFIGURATION OF SURFACE MOUNTED DEVICES TAPING SOD-123FL 54 1.0 2.13 0.039 High Diode Semiconductor 4
DSS310 价格&库存

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