DS22W

山东晶导微电子有限公司 DS22W THRU DS220W Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 2.0A PINNING PIN Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: DS22W ---K22 DS24W ---K24 DS26W ---K26 DS28W ---K28 DS210W ---K210 DS212W ---K212 DS215W ---K215 DS220W ---K220 Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00048oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter DS22W DS24W DS26W DS28W DS210W DS212W DS215W DS220W Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 2 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） 50 0.55 40 0.70 0.85 80 220 A 0.95 0.3 5 0.5 5 IR Cj Operating Junction Temperature Range Storage Temperature Range VF A 2.0 V mA pF RθJA 80 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. 2015.03 SOD123FL-S-DS220W-2A200V Page 1 of 3 山东晶导微电子有限公司 DS22W THRU DS220W Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 3.0 100LFM 2.5 2.0 1.5 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.5 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 DS22W/DS24W DS26W-DS220W 10 1 T J =25°C 10 0 0 60 80 100 Fig.4 Typical Junction Capacitance 500 10 1.0 DS22W/DS24W DS26W/DS28W DS210W/DS212W DS215W/DS220W 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 DS22W/DS24W 20 DS26W-DS220W 10 10 1 0.1 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance DS22W-DS28W 50 DS210W-DS220W 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 T J =25°C 200 1.8 60 10 Junction Capacitance ( pF) 20 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 Lead Temperature (°C) 200 100 10 Number of Cycles at 60Hz 2015.03 T J =100°C 10 3 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 DS22W THRU DS220W Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm 1.2 (47) 1.2 (47) 2.0 (79) Marking Unit： mm (mil) 2015.03 ∠ 7° The recommended mounting pad size 1.2 (47) g pad e E A pad HE www.sdjingdao.com Type number Marking code DS22W K22 DS24W K24 DS26W K26 DS28W K28 DS210W K210 DS212W K212 DS215W K215 DS220W K220 Page 3 of 3