R2M

R2M 规格书 R2M 1.2 AMP. SURFACE MOUNT GENERAL PURPOSE FAST RECOVERY RECTIFIERS SOD-123FL FEATURES ·Glass passivated device ·Ideal for surface mouthed applications ·Low reverse leakage ·Metallurgically bonded construction ·High temperature soldering guaranteed: 250°C /10 seconds at terminals. .031(0.8) .047(1.2) .067(1.7) .075(1.9) .106(2.7) .114(2.9) .138(3.5) .154(3.9) MECHANICAL DATA ·Case: JEDEC SOD-123FL,molded plastic over passivated chip ·Terminals:Solder Plated, solderable per MIL-STD-750, Method 2026 ·Polarity: Color band denotes cathode end ·Weight: 0.006 ounces, 0.02 gram ·Mounting position: Any .047(1.2) .055(1.4) .006(0.15) .010(0.25) .020(0.5) .031(0.8) Dimensions in millimeters MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYM Type Number BOL R2M units Maximum Recurrent Peak Reverse Voltage VRRM 1000 V Maximum RMS Voltage VRMS 700 V Maximum DC Blocking Voltage VDC 1000 V Maximum Average Forward rectified Current IF(AV) 1.5 A IFSM 50 A VF 1.3 V Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.5A DC 5.0 Maximum DC Reverse Current @Tj=25°C at rated DC blocking voltage @Tj =125°C IR Maximum Reverse Recovery Time (Note 1) trr 500 nS Typical Junction Capacitance (Note 2) CJ 15 pF Typical thermal resistance (Note 3) R(JA) 85 °C /W Storage Temperature Range TSTG -55 to +150 °C TJ -55 to +150 °C Operation Temperature Range 100.0 Note: 1.Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0 volts d.c. 3. Measured on P.C.Board with 0.2×0.2”(5.0×5.0mm)Copper Pad Areas 1 µA R2M 规格书 RATING AND CHARACTERISTIC CURVES (R2M) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1.5 INSTANEOUS FORWARD CURRENT,(A) AVERGE FORWARD RECTIFIED CURRENT,(A) 10.0 Single Phase Half Wave 60Hz Resistive or inductive Load 0 50 150 100 8.3ms Single Half Sine-Wave (JEDEC Method) INSTANEOUS REVERSE CURRENT,(μA) PEAK FORWARD SURGE CURRENT,(A) 1.0 .8 1.2 15 TJ=125℃ TJ=100℃ TJ=25℃ 1 100 10 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) NUMBER OF CYCLES AT 60Hz FIG.5-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERSITIC 50 Ω NONINDUCTIVE (+) 25Vdc (approx) (-) 1.4 FIG.4-TYPICAL REVERSE CHARACTERISTICS 30 0 .6 INSTANEOUS FORWARD VOLTAGE,(V) FIG.3-MAXIMUN NON-REPETITIVE FORWARD SURGE CURRENT 45 TJ=25℃ Pulse Width=300μs 1% Duty Cycle .1 .01 200 CASE TEMPERTURE,(℃) 60 1.0 10 Ω NONINDUCTIVE (-) PULSE GENERATOR (NOTE 2) 1Ω (NOTE 1) NON- OSCILOSCOPE INDUCTIVE (+) NOTES:1. Rise Time=7ns max, Input Impedance= 1 megohm.22pF. 2. Rise Time=10ns max, Souce Impedance= 50 ohms. 2 R2M 规格书 Marking and packaging illustration 1、Marking SYMBOL R2M A B B A Explanation Color Band Denotes Cathode Product Name 2、Packaging d Top cover tape thickness 0.10mm(0.004") max.thick W1 Embossed carrier tape °MAX A °MAX Embossed cavity SPECIFICATIONS mm(inch) SYMBOL PACKAGE SOD-123FL ITEM Carrier width A 2.1(0.083)Max Carrier length B 4.0(0.157)Max Sprocket hole d ø1.55(0.061)Typ Reel outer diameter D 177.8(7)Typ Reel inner diameter D1 50.0(1.969)Min Feed hole diameter D2 13.0(0.512)Typ Sprocket hole position J 1.75(0.069)Typ Punch hole position H 3.50(0.138)Typ Carrier depth K 1.60(0.063)Typ Punch hole pitch P 4.00(0.157)Typ Sprocket hole pitch P0 4.00(0.157)Typ Embossment center P1 2.00(0.079)Typ Overall tape thickness T 0.25(0.098)Typ Tape width W 8.15(0.321)Typ Reel width W1 10.5(0.413)Min 3