MS80N03

www.msksemi.com MS80N03 Semiconductor Compiance Schematic diagram Features VDS = 30V,ID =80A RDS(ON),3.5mΩ(Typ) @ VGS =10V . RDS(ON), 7mΩ(Typ) @ VGS =4 5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances Application DC-DC converters TO-252 Synchronous Rectifier Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 80 A 63 A Drain Current-ContinuousNote3 TC=25℃ TC=100℃ ID Drain Current-Pulsed IDM 200 A Avalanche Energy EAS 280 mJ Avalanche Current IAS 33 A PD 105 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Note1 Note4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Parameter Thermal Resistance,Junction-to-Case Symbol Min. Typ. Max Unit RθJC - 3.3 - ℃/W www.msksemi.com MS80N03 Semiconductor Compiance Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions VGS=0V,IDS=250uA Min. Typ. Max. Unit 30 - - V Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.7 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=30A - 3.5 5.5 VGS=4.5V,IDS=20A - 7 8.9 Conditions Min. Typ. Max. - 1963 - - 248 - - 221 - - 1.43 - Ω Min. Typ. Max. Unit - 55 - - 36.4 - - 37.5 - - 14 - - 41 - - 6.4 - - 11 - mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance C rss Gate Resisitance Rg VDS =15V, VGS = 0V, f=1MHz VDD=0V,VGS=1V, F=1MHz Unit pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Td(off) Conditions VGS=10V,VDs=15V, RGEN=3Ω ID=20A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd V DS=15V,IDS=45A, V GS=10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=20A - - 1.2 V Reverse Recovery Time trr TJ=25℃,IF=20A - 21.7 - nS Reverse Recovery Charge Qrr di/dt=100A/us - 7.2 - nC Drain-Source Diode Forward Voltage Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: EAS condition: L=0.5mH,VDD=15V,VG=10V,VGATE=30V,Start TJ=25℃. www.msksemi.com MS80N03 Semiconductor Compiance www.msksemi.com MS80N03 Semiconductor Compiance www.msksemi.com MS80N03 Semiconductor Compiance www.msksemi.com MS80N03 Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c V L3 h A1 L4 L E φ L2 L1 D2 b e Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. REEL SPECIFICATION P/N PKG QTY MS80N03 TO-252 2500 www.msksemi.com MS80N03 Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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