CD4007BE

CD4007B CD4007M/CD4007C Dual Complementary Pair Plus Inverter General Description The CD4007B consists of three complementary pairs of N- and P-channel enhancement mode MOS transis- tors suitable for series/shunt applications. All inputs are pro- tected from static DIP14 discharge by diode clamps to VDD and VSS. For proper operation the voltages at all pins must be constrained to be between VSS b 0.3V and VDD a 0.3V at all times. SOP14 Features  Wide supply voltage range：3.0V to 15V  High noise immunity：0.45 VCC (typ.) TSSOP14 Ordering Information DEVICE Package Type MARKING Packing Packing Qty CD4007BE DIP14 CD4007BE TUBE 1000pcs/Box CD4007BM/TR SOP14 CD4007B REEL 2500pcs/Reel TSSOP14 CD4007B REEL 2500pcs/Reel CD4007BMT/TR http://www.hgsemi.com.cn 1/7 2018 MAR CD4007B Connection Diagram Dual-In-Line Package Note: All P-channel substrates are connected to VDD and all N-channel substrates are connected to VSS. Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Parameter Voltage at Any Pin Min. Max. Unit VSS -0.3 VDD -0.3 V Operating Temperature Range -40 +85 ℃ Storage Temperature Range -65 +150 ℃ Power Dissipation (PD) Dual-In-Line 700 mW Small Outline 500 mW Operating VDD Range VSS +3.0 VSS +15 V Lead Temperature (Soldering, 10 seconds) http://www.hgsemi.com.cn 260 2/7 ℃ 2018 MAR CD4007B DC Electrical Characteristics Limits +25℃ +85℃ Units Min Typ Max Min Typ Max Min Typ Max -40℃ Symbol Parameter Conditions IL Quiescent Device Current VDD = 5.0V VDD = 10V - - 0.5 1.0 - 0.005 0.05 0.005 1.0 - - 15 30 mA mA PD Quiescent Device VDD = 5.0V Dissipation Package VDD = 10V - - 2.5 10 - 0.025 2.5 0.05 10 - - 75 300 mW mW VOL Output VoltageLow Level VDD = 5.0V VDD = 10V - - 0.05 0.05 - 0 0 0.01 0.01 - - 0.05 0.05 V V VOH Output VoltageHigh Level VDD = 5.0V VDD = 10V 4.95 9.95 - - 4.95 9.95 5.0 10 - 4.95 9.95 - - V V VNL Noise Immunity (All inputs) VDD = 5.0V, VO = 3.6V VDD = 10V, VO = 7.2V - - 1.5 3.0 2.25 4.5 1.5 3.0 - 1.4 2.9 V V VNH Noise Immunity (All Inputs) VDD = 5.0V, VO = 0.95V VDD = 10V, VO = 2.9V 3.6 7.1 - - 3.5 7.0 2.25 4.5 - 3.5 7.0 - - V V IDN Output Drive CurrentN-Channel 0.35 1.2 - - 0.3 1.0 1.0 2.5 - 0.24 0.8 - - Ma mA IDP Output Drive CurrentP-Channel VDD = 5.0V, VO = 0.4V, VI = VDD VDD = 10V, VO = 0.5V, VI = VDD VDD = 5.0V, VO = 2.5V, VI = VSS VDD = 10V, VO = 9.5V, VI = VSS -1.3 -0.65 - - -1.1 -0.55 -4.0 -2.5 - -0.9 -0.45 - - mA mA II Input Current - - - - - 10 - - - - pA Note 1: This device should not be connected to circuits with the power on because high transient voltages may cause permanent damage. http://www.hgsemi.com.cn 3/7 2018 MAR CD4007B AC Electrical Characteristics* TA =25°C and CL = 15 pF and rise and fall times =20 ns. Typical temperature coefficient for all values of VDD =0.3%/°C Symbol Parameter tPLH = tPHL Propagation Delay Time tTLH = tTHL Transition Time CI Input Capacitance Conditions VDD = 5.0V VDD = 10V VDD = 5.0V VDD = 10V Any Input Min Typ Max Units 35 20 50 30 5 75 50 100 50 ns ns ns ns pF *AC Parameters are guaranteed by DC correlated testing. AC Test Circuits Switching Time Waveforms http://www.hgsemi.com.cn 4/7 2018 MAR CD4007B Physical Dimensions DIP14 B L1 L E D1 D d A c a Dimensions In Millimeters(DIP14) A B D D1 E L L1 a c Min： 6.10 18.94 8.40 7.42 3.10 0.50 3.00 1.50 0.40 Max： 6.68 19.56 9.00 7.82 3.55 0.70 3.60 1.55 0.50 Symbol： d 2.54 BSC SOP14 Q A C C1 B D A1 a 0.25 b Dimensions In Millimeters(SOP14) A A1 B C C1 D Min： 1.35 0.05 8.55 5.80 3.80 0.40 0° 0.35 Max： 1.55 0.20 8.75 6.20 4.00 0.80 8° 0.45 Symbol： http://www.hgsemi.com.cn 5/7 Q a b 1.27 BSC 2018 MAR CD4007B Physical Dimensions TSSOP14 Dimensions In Millimeters(TSSOP14) A A1 B C C1 D Min： 0.85 0.05 4.90 6.20 4.30 0.40 0° 0.20 Max： 0.95 0.20 5.10 6.60 4.50 0.80 8° 0.25 Symbol： http://www.hgsemi.com.cn 6/7 Q a b 0.65 BSC 2018 MAR CD4007B IMPORTANT STATEMENT: Huaguan Semiconductor reserves the right to change its products and services without notice. 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