SM6103PSUC-TRG

SM6103PSU ® P-Channel Enhancement Mode MOSFET Pin Description Features • -60V/-15A, RDS(ON) =93mΩ(max.) @ VGS =-10V RDS(ON) =128mΩ(max.) @ VGS =-4.5V Drain 4 2 • Reliable and Rugged • Lead Free and Green Devices Available 3 Source 1 Gate (RoHS Compliant) • • Top View of TO-252-3 100% UIS + Rg Tested ESD protection pass 2KV D Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. G Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P-Channel MOSFET Ordering and Marking Information Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device SM6103PS Assembly Material Handling Code Temperature Range Package Code SM6103PS U : SM6103P XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 1 www.sinopowersemi.com SM6103PSU ® Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -60 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 150 TJ TSTG IS Diode Continuous Forward Current ID Continuous Drain Current IDM Pulsed Drain Current PD Maximum Power Dissipation R θJC -55 to 150 Storage Temperature Range Thermal Resistance-Junction to Case ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C -10 TC=25°C -15 TC=100°C -9.5 TC=25°C -62* TC=25°C 44.6 TC=100°C 17.9 Steady State 2.8 TA=25°C -5.8 TA=70°C -4.6 TA=25°C 6.25 TA=70°C 4 t ≤ 10s 20 Steady State 55 V °C A W °C/W A W °C/W RθJA Thermal Resistance-Junction to Ambient IAS a Avalanche Current, Single pulse (L=0.1mH) 19 A Avalanche Energy, Single pulse (L=0.1mH) 18 mJ EAS a Note *：Current limited by bond wire. Note a：UIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature TJ = 25oC). Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 2 www.sinopowersemi.com SM6103PSU ® Electrical Characteristics Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions Min. Typ. Max. Unit -60 - - V - - -1 - - -30 Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) b VGS=0V, IDS=-250µA VDS=-48V, VGS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, I DS=-250µA -1 -2 -3 V Gate Leakage Current VGS=±20V, VDS=0V - - ±10 µA VGS=-10V, IDS=-5.8A - 73 93 VGS=-4.5V, IDS=-3.5A - 93 128 Diode Forward Voltage ISD =-1A, V GS=0V - -0.7 -1 V Reverse Recovery Time ISD =-5.8A, dlSD/dt=100A/µs - 22 - ns - 23 - nC - 10 20 Ω - 530 - - 66 - - 36 - - 9 - - 6 - - 36 - - 25 - - 12 - - 1.5 - - 3.3 - Drain-Source On-state Resistance mΩ Diode Characteristics VSD b trr c Qrr c Reverse Recovery Charge Dynamic Characteristics c RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Cis s Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=-30V, Frequency=1.0MHz t d(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg VDD=-30V, RL=30Ω, IDS=-1A, V GEN=-10V, RG=6Ω pF ns c Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-30V, VGS=-10V, IDS=-5.8A nC Note b：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note c：Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 3 www.sinopowersemi.com SM6103PSU ® Typical Operating Characteristics Power Dissipation Drain Current 50 18 15 -ID - Drain Current (A) Ptot - Power (W) 40 30 20 10 12 9 6 3 o 0 o TC=25 C 0 20 40 60 80 0 100 120 140 160 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 3 Normalized Transient Thermal Resistance 300 Rd s( on ) Li m it 100 -ID - Drain Current (A) TC=25 C,V G=-10V 10 100µs 1ms 10ms 1 DC o TC=25 C 0.1 0.1 1 10 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 100 300 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 Duty = 0.5 1 RθJC :2.8 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) 4 www.sinopowersemi.com SM6103PSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 210 20 VGS=-5,-6,-7,-8,-9,-10V -4.5V 180 RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) 16 12 -4V 8 -3.5V 4 150 VGS=-4.5V 120 VGS=-10V 90 60 30 -3V 0 0 1 2 3 4 0 5 0 5 10 15 20 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 210 1.6 1.4 Normalized Threshold Voltage 180 RDS(ON) - On Resistance (mΩ) 30 IDS=-250µA IDS=-5.8A 150 120 90 60 30 25 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 1.2 5 www.sinopowersemi.com SM6103PSU ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 50 2.00 VGS = -10V IDS = -5.8A 1.50 -IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 10 o Tj=150 C o T j=25 C 1 0.25 o RON@Tj=25 C: 73mΩ 0.00 -50 -25 0 25 50 75 0.1 0.0 100 125 150 Tj - Junction Temperature (°C) 0.2 0.4 1.4 1.6 VDS=-30V 9 I =-5.8A DS -VGS - Gate - source Voltage (V) Ciss C - Capacitance (pF) 1.2 10 600 480 360 240 Crss 1.0 Gate Charge Frequency=1MHz 120 0.8 -VSD - Source - Drain Voltage (V) Capacitance 720 0.6 Coss 8 7 6 5 4 3 2 1 0 0 8 16 24 32 0 0 40 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 2 4 6 8 10 12 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM6103PSU ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS VDD RG VDD IAS tp IL VDS 0.01Ω tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT td(off) tf VGS 10% VGS RG VDD tp 90% VDS Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 7 www.sinopowersemi.com SM6103PSU ® Package Information TO-252-3 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A VIEW A TO-252-3 RECOMMENDED LAND PATTERN MILLIMETERS INCHES MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 0.215 b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0° 0° 8° 8° 2.286 1.5 MIN. 4.572 UNIT: mm Note : Follow JEDEC TO-252 . Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 8 www.sinopowersemi.com SM6103PSU ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.0±2.00 50 MIN. TO-252-3 T1 C d D W E1 F 16.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05 -0.00 -0.20 P0 P1 P2 4.0±0.10 8.0±0.10 2.0±0.05 D0 1.5+0.10 -0.00 D1 1.5 MIN. T A0 B0 K0 0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 9 www.sinopowersemi.com SM6103PSU ® Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 10 www.sinopowersemi.com SM6103PSU ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - February, 2015 11 www.sinopowersemi.com SM6103PSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness