NP8205MR

NP8205MR 20V Dual N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP8205MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features     VDS =20V，ID =6.5A RDS(ON)=19.6 mΩ (typical) @ VGS=4.5V RDS(ON)=23.7 mΩ (typical) @ VGS=2.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment SOT23-6L (Topview) Application    Battery protection Load switch Power management Package  SOT23-6L Ordering Information Part Number Storage Temperature Package Devices Per Reel NP8205MR -55°C to +150°C SOT23-6L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±12 V Drain Current-Continuous (Silicon Limited) TA=25°C TA=75°C Pulsed Drain Current (Package Limited) Maximum power dissipation IDM TA=25°C TA=75°C Operating junction Temperature range Rev.1.1 —Nov. 8. 2017 ID PD Tj 1 6.5 4 25 1.5 1 -55—150 A A W ℃ www.natlinear.com NP8205MR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 20 - - V Zero gate voltage drain current IDSS VDS=20V, VGS=0V - - 1 µA Gate-body leakage IGSS VDS=0V, VGS=±12V - - ±100 nA 0.5 0.7 1.2 V VGS=4.5V, ID=6A - 19.6 22 VGS=2.5V, ID=5.5A - 23.7 27 VDS=5V, ID=6A - 10 - - 430 - - 64 - - 55 - - 10 - - 11 - - 34 - - 29 - - 6.4 - - 0.7 - - 1.7 - ON Characteristics Gate threshold voltage VGS(th) Drain-source on-state resistance RDS(ON) Forward transconductance VDS=VGS, ID=250µA gfs mΩ S Dynamic Characteristics Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=10V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time Rise time Turn-off delay time Fall time tD(ON) VDS=10V VGS=4.5V ID=6A RGEN=6Ω tr tD(OFF) tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=10V,ID=6A VGS=4.5V ns nC Thermal Characteristics Thermal Resistance junction-to ambient Rev.1.1 —Nov. 8. 2017 Rth JA 2 100 ℃/W www.natlinear.com NP8205MR Typical Performance Characteristics Rev.1.1 —Nov. 8. 2017 3 www.natlinear.com NP8205MR Rev.1.1 —Nov. 8. 2017 4 www.natlinear.com NP8205MR Package Information  SOT23-6L Rev.1.1 —Nov. 8. 2017 5 www.natlinear.com