HSW2N15

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSW2N15 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology VDS 150 V RDS(ON),typ 380 mΩ ID 1.4 A SOT23-6L Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V Continuous Drain Current, VGS @ 10V1 1.4 A Continuous Drain Current, VGS @ 10V1 0.88 A 5.6 A 1.56 W Pulsed Drain Current2 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA Parameter Thermal Resistance Junction-ambient(steady Thermal Resistance www.hs-semi.cn Typ. state)1 Junction-ambient(t