HM8810A-VB

HM8810A www.VBsemi.com Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.024 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 • Halogen-free Option Available • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Pb-free Available RoHS* COMPLIANT TSOP6 Top View S1 D1/D2 S2 1 6 2 5 3 4 D D G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD 5.2 4.8 4.2 30 1.5 A 1.0 1.5 1.0 0.96 0.64 TJ, Tstg Operating Junction and Storage Temperature Range V 6.0 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typ. Max. 72 83 100 120 55 70 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. 服务热线：400-655-8788 1 HM8810A www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.5 IGSS Typ.a Max. Unit 1.5 V VDS = 0 V, VGS = ± 4.5 V ± 200 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 70 °C 25 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Voltageb 30 A VGS = 4.5 V, ID = 5.5 A 0.024 VGS = 2.5 V, ID = 3.5 A 0.028 gfs VDS = 10 V, ID = 5.5 A 30 VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 12 18 VDS = 10 V, VGS = 4.5 V, ID = 5.5 A 2.2 RDS(on) Forward Transconductanceb Diode Forward VDS ≤ 5 V, VGS = 4.5 V µA Ω S V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.6 Turn-On Delay Time td(on) 245 365 330 495 860 1300 510 765 VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time nC ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10000 1000 8 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10 6 4 100 10 TJ = 150 °C 1 2 TJ = 25 °C 0.1 0 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage 18 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 服务热线：400-655-8788 2 HM8810A www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6.0 6.0 VGS = 5 thru 3 V 2.5 V 2.5 I D - Drain Current (A) I D - Drain Current (A) 4.5 2.0 1.5 1.0 2V 0.5 0 1 2 3 1.0 TC = 125 °C 25 °C - 55 °C 4 0 0.0 5 0.5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 5 VGS - Gate-to-Source Voltage (V) 0.05 0.04 0.03 VGS = 2.5 V VGS = 4.5 V 0.02 VDS = 10 V ID = 5.5 A 4 3 2 1 0 0.01 5 0 10 15 25 20 0 30 3 6 On-Resistance vs. Drain Current 15 40 VGS = 4.5 V ID = 5.5 A I S - Source Current (A) 10 1.2 1.0 0.8 0.6 - 50 12 Gate Charge 1.6 1.4 9 Qg - Total Gate Charge (nC) ID - Drain Current (A) R DS(on) - On-Resistance (Normalized) 1.5 VDS - Drain-to-Source Voltage (V) 0.06 R DS(on) - On-Resistance (Ω) 1.5 0.5 1V 0 2.0 TJ = 150 °C TJ = 25 °C 1 0.1 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 150 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 服务热线：400-655-8788 3 HM8810A www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.4 0.04 0.2 0.03 V GS(th) Variance (V) R DS(on) - On-Resistance (Ω) ID = 250 µA ID = 5.5 A 0.02 0.01 0.0 - 0.2 - 0.4 0.00 0 1 2 3 4 5 - 0.6 - 50 6 VGS - Gate-to-Source Voltage (V) - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 10 200 Limited by R DS(on)* 160 I D - Drain Current (A) Power (W) 5 120 80 1 ms 1 100 ms 0.1 40 10 ms 1s 10 s TC = 25 °C Single Pulse DC 0.01 0 0.001 0.01 0.1 1 10 0.1 Time (s) Single Pulse Power 10 100 1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 115 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 4 HM8810A www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 5 HM8810A www.VBsemi.com TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R INCHES Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 7 Nom 服务热线：400-655-8788 6 HM8810A www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.099 0.039 0.020 0.019 (1.001) (0.508) (0.493) 0.064 (1.626) 0.028 (0.699) (3.023) 0.119 (2.510) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 7 HM8810A www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.