WPT2F42-6/TR

WPT2F42 WPT2F42 Http//:www.willsemi.com Single, PNP, -30V, -3A, Power Transistor Descriptions The WPT2F42 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Standard Products WPT2F42 are SOT-23-6L Pb-free and Halogen-free. Features C 1 6 C C 2 5 C B 3 4 E Pin configuration (Top view) z Ultra low collector-to-emitter saturation voltage z High DC current gain >100 z 3A continue collector current z Small package SOT-23-6L. Applications 2F42 = Device Code YY =Year WW =Week Marking z Charging circuit z Power regulator z Other power management in portable equipments Will Semiconductor Ltd. Order information Device Package Shipping WPT2F42-6/TR SOT-23-6L 3000/Reel&Tape 1 2017.7.28 - Rev.1.1 WPT2F42 Absolute maximum ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO -30 V Collector-base voltage VCBO -30 V Emitter-base voltage VEBO -6 V Continues collector current IC -3 A Pulse collector current ICM -6 A Power dissipation @ 25 C PD 2 W Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C o Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO IC=-10mA, IB=0mA -30 V Collector-base breakdown voltage BVCBO IC=-1mA, IE=0mA -30 V Emitter-base breakdown voltage BVEBO IE=-100uA, IC=0mA -6  V Collector cutoff current ICBO VCB=-30V -100 nA Emitter cutoff current IEBO VEB=-5V -100 nA -0.5 V Collector-emitter saturation voltage VCE(sat) IC=-2.0A, IB=-200mA Base-emitter saturation voltage VBE(sat) IC=-2.0A, IB=-200mA -1.0 -1.5 V Base-emitter forward voltage VBE(on) IC=-0.5A, VCE=-2V -0.7 -1.0 V hFE IC=-1.0A , VCE=-2V DC current gain Will Semiconductor Ltd. 2 100 300 2017.7.28 - Rev.1.1 WPT2F42 o Typical Characteristics (Ta=25 C, unless otherwise noted) 10 5.0 4.0 -40mA 3.5 -30mA IC-Collector Current (A) IC-Collector Current (A) VCE=-2V -50mA 4.5 3.0 -20mA 2.5 2.0 -10mA 1.5 1.0 -5mA 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 O VBE-Base to Emitter Voltage(V) Transfer characteristics VCE(sat)-Collector Saturation Voltage(V) hFE-DC Current Gain O Ta=25 C O Ta=-45 C 50 5 1E-3 0.01 0.1 1 Ta=-45 C 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 5000 O O 0.01 Output characteristics Ta=85 C Ta=25 C 0.1 VCE-Collector to Emitter Voltage(V) 500 O Ta=85 C 1 10 IC-Collector Current(A) 1000 O Ta=85 C 100 O Ta=25 C O Ta=-45 C 10 1 1E-3 0.01 0.1 1 10 IC-Collector Current(A) DC current gain C-E saturation voltage vs. Collector current % of Rated Power or IPP 100 80 60 40 20 0 0 25 50 75 100O 125 150 Ambient Temperature( C) Power Derating Will Semiconductor Ltd. 3 2017.7.28 - Rev.1.1 WPT2F42 Package outline dimensions SOT-23-6L Symbol Dimensions In Millimeters Min. Max. A 1.050 1.250 10 0.000 0.100 A2 1.050 1.150 b 0.300 0.500 c 0.100 0.200 D 2.820 3.020 E 1.500 1.700 E1 2.650 2.950 e 0.950(Basic) e1 1.800 2.000 L 0.300 0.600  Will Semiconductor Ltd. 0 o 8o 4 2017.7.28 - Rev.1.1