AS8205M

AS8205M N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 23mΩ@4.5V 20V 5A 27mΩ@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Circuit diagram Package SOT-23-6L Marking G1 D1/D2 G2 8205 S1 D1/D2 S2 Page 1 Document ID Issued Date Revised Date Revision Page. AS-3150102 2003/03/08 2012/05/16 D 4 AS8205M N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5 A Pulsed Drain Current IDM 25 A Power Dissipation PD 1.5 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 ℃ ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage Drain-source on-resistance 1) 1) Forward transconductance RDS(on) gFS 20 V 0.5 1 µA ±100 nA 1.2 V VGS =4.5V, ID =4.5A 18 23 VGS =2.5V, ID =3.5A 23 27 VDS =5V, ID =7A mΩ 9 S 2) Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 125 Total Gate Charge Qg 11 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 Turn-on delay time td(on) 18 Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) 800 VDS =8V,VGS =0V,f =1MHz 155 VDS =10V,VGS =4.5V,ID =4A pF 2.3 nC 5 VDD=10V,VGS=4V, ID =1A,,RGEN=10Ω nS 43 tf 20 Source-Drain Diode characteristics Diode Forward voltage VDS VGS =0V, IS=1.7A 1.2 V Notes: 1) Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%. 2) Guaranteed by design, not subject to production testing. Page 2 Document ID Issued Date Revised Date Revision Page. AS-3150102 2003/03/08 2012/05/16 D 4 AS8205M N-Channel Enhancement Mode MOSFET Typical Characteristics Page 3 Document ID Issued Date Revised Date Revision Page. AS-3150102 2003/03/08 2012/05/16 D 4 AS8205M N-Channel Enhancement Mode MOSFET SOT-23-6L Package Information Symbol Dimensions In Millimeters Min. Dimensions In Inches Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 2.650 2.950 0.104 0.116 E1 1.500 1.700 0.059 0.067 e 0.950 (BSC) 0.037 (BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Page 4 Document ID Issued Date Revised Date Revision Page. AS-3150102 2003/03/08 2012/05/16 D 4