WPM2037-6/TR

WPM2037 WPM2037 Http//:www.willsemi.com Single P-Channel, -20V, -3.6A , Power MOSFET VDS (V) Rds(on) (ȍ) 0.047@ VGS=̢4.5V 0.060@ VGS=̢2.5V -20 0.076@ VGS=̢1.8V SOT-23-6L Descriptions The WPM2037 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced D D S 6 5 4 1 2 D D 3 G trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2037 is Pb-free. Pin configuration (Top view) Features 6 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L 5 2037 YYWW 1 2 2037 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Will Semiconductor Ltd. 4 3 = Device Code YY = Year WW = Week Marking Order information Device Package Shipping WPM2037-6/TR SOT-23-6L 3000/Reel&Tape 1 Dec,2011 - Rev.1.1 WPM2037 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C TA=70°C TA=25°C ID TA=70°C TA=25°C -3.3 -2.9 -2.7 1.1 0.9 0.7 0.6 -3.3 -3.1 -2.7 -2.4 0.9 0.8 0.6 0.5 PD TA=70°C V -3.6 PD Unit A W A W Pulsed Drain Current c IDM -20 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s RșJA Steady State t ” 10 s RșJA Steady State Steady State Typical Maximum 90 108 112 128 110 128 132 152 50 68 RșJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W Dec,2011 - Rev.1.1 WPM2037 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS =-16 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±12V ±100 nA VGS(TH) VGS = VDS, ID = -250uA -1.0 V ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -0.35 -0.58 VGS = -4.5V, ID = -3.2A 47 61 VGS = -2.5V, ID = -2.8A 59 71 VGS = -1.8V, ID = -2.3A 77 94 VDS = -5.0 V, ID = -3.6A 10 mŸ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 11 Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.6 Gate-to-Source Charge QGS ID = -2.7A 1.3 Gate-to-Drain Charge QGD 2.7 Turn-On Delay Time td(ON) 9.5 Rise Time tr VGS = -4.5 V, VDS = -6 V, 5.8 Turn-Off Delay Time td(OFF) RL=3 Ÿ, RG=6 Ÿ 54 Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = -10 V 1130 pF 120 nC SWITCHING CHARACTERISTICS ns 13 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1.0A 3 -0.75 -1.5 V Dec,2011 - Rev.1.1 WPM2037 Typical Characteristics (Ta=25oC, unless otherwise noted) 20 VGS=-3.0 ~ -4.5V VGS=-2.5V -IDS-Drain to Source Current(A) -IDS-Drain-to-Source Current (A) 20 15 VGS=-2.0V 10 VGS=-1.5V 5 VGS=-1.0V 0 0 1 2 3 4 5 VDS= -5V 16 o T=-50 C 12 o T=125 C 8 o T=25 C 4 0 0.0 0.5 -V DS-Drain-to-Source Voltage(V) Output characteristics RDS(on)- On-Resistance (m:) RDS(on)- On-Resistance(m:) 2.0 2.5 3.0 3.5 80 80 VGS=-2.5V 60 VGS=-4.5V 40 70 IDS=-3.2A 60 50 40 1.0 2 4 6 8 -IDS-Drain-to-Source Current(A) 1.5 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -V GS-Gate-to-Source Voltage(V) On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage 80 0.8 -VGS(TH) Gate Threshold Voltage (V) RDS(on)- On-Resistance (m:) 1.5 Transfer characteristics 100 20 1.0 -VGS-Gate-to-Source Voltage(V) 70 VGS=-4.5V,ID=-3.2A 60 50 40 30 20 -50 -25 0 25 50 75 100 125 150 IDS=-250uA 0.6 0.5 0.4 0.3 -50 o -25 0 25 50 75 100 125 150 o Temperature( C) Temperature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. 0.7 Threshold voltage vs. Temperature 4 Dec,2011 - Rev.1.1 WPM2037 1.5 1750 1250 1000 750 Ciss Coss Crss 500 250 0 0 4 8 12 16 20 1.2 0.9 o T=150 C 0.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -VSD-Source-to-Drain Voltage(V) Capacitance Body diode forward voltage 100 40 TJ(Max)=150°C, TA=25°C TJ(Max)=150°C TA=25°C RDS(ON) limited -ID (Amps) 30 Power (W) o T=25 C 0.6 -V DS Drain-to-Source Voltage (V) 20 10 100Ps 1ms 1 10ms DC 10 100m 10s 1s 0 0.001 0.1 0.01 0.1 1 10 Pulse Width (s) 100 1000 0.1 1 10 100 -VDS (Volts) Single pulse power Safe operating area 2 1 Normalized Effective Transient Thermal Impedance C - Capacitance(pF) 1500 -ISD-Source to Drain Current(A) V GS =0V F=1MHz Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 112_C/W 3. TJM ï TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10ï4 10ï3 10ï2 10ï1 1 Square Wave Pulse Duration (sec) 10 100 600 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 Dec,2011 - Rev.1.1 WPM2037 Package outline dimensions SOT-23-6L Symbol Dimensions in millimeter Min. Typ. Max. A 1.050 1.150 1.250 A1 0.000 0.050 0.100 A2 1.050 1.100 1.150 b 0.300 0.400 0.500 c 0.100 0.150 0.200 D 2.820 2.920 3.020 E 1.500 1.600 1.700 E1 2.650 2.800 2.950 e 0.950(BSC) 1.900 e1 1.800 L 0.300 0.600 © 0e 8e Will Semiconductor Ltd. 6 2.000 Dec,2011 - Rev.1.1