SE8831A

Jul 2014 SE8831A Dual N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 20V RDS(ON) = 15.5mΩ @ VGS=4.5V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 6.1 30 A PD 0.7 W TJ -55 to 175 ℃ 1. SE8831A Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 16V, VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=10V 1 μA Gate Threshold Voltage VDS= VGS, ID=250μA V VGS(th) Static Drain-Source On-Resistance V 0.5 0.7 1.0 - 15.5 19.5 VGS=3.1V, ID=6.0A 17.5 22.5 VGS=2.5V, ID=5.5A 19 26 VGS=4.5V, ID=6.3A RDS(ON) 20 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 4900 pF 410 pF 315 pF 125 nC 24 nC 49 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=30V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=30V, 20 ns td(off) Turn-Off Delay Time RGEN=2.5Ω 70 ns td(r) Turn-On Rise Time ID=2A 19 ns td(f) Turn-Off Fall Time 30 ns ID=30A Thermal Resistance Symbol RθJC Parameter Typ Max Units Thermal Resistance Junction to Case(t≤10s) 63 78 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE8831A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE8831A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE8831A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE8831A Package Outline Dimension The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.