SEBT818BA

SHANGHAI June 2008 MICROELECTRONICS CO., LTD. Revision:A SEBT818BA HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR DESCRIPTION Features The device is manufactured in low voltage PNP z Planar Technology by using a "Base Island" VERY LOW COLLECTOR EMITTER SATURATION VOLTAGE layout. z DC CURRENT GAIN>100(hPE) The resulting Transistor shows exceptional high z 3 A CONTINUOUS COLLECTOR CURRENT(IC) gain performance coupled with very low z saturation voltage SURFACE-MOUNTING SOT23-5L PACKAGE IN TAPE & REEL APPLICATIONS z POWER MANAGEMENT IN PORTABLE EQUIPMENTS z SWITCHING REGULATOR IN BATTERY CHARGER APPLICATIONS Absolute Maximum Ratings Parameter Symbol Value Unit Collector-Base Voltage (IE = 0) VCBO -30 V Collector-Emitter Voltage (IB = 0) VCEO -30 V Emitter-Base Voltage (IC = 0) VEBO -5 V Collector Current IC -3 A Collector Peak Current ICM -6 A Base Current IB -0.2 A Base Peak Current IBM -0.5 A Total Dissipation at TC = 25 oC Ptot 1.2 Storage Temperature Max. Operating Junction Temperature ShangHai Sino-IC Microelectronics Co., Ltd. B Tstg Tj W -65 to 150 o 150 o C C 1. SEBT818BA THERMAL DATA Rthj-amb(1) Thermal Resistance Junction-ambient Max o 104.2 C/W Electrical Characteristics Symbol ICBO Parameter Test Conditions Collector Cut-off VCB = -30 V Current (IE = 0) Min. Typ. Max. -0.1 o Unit µA VCB = -30 V TC = 125 C -20 µA VEB = -5 V -0.1 µA Emitter Cut-off IEBO Current (IC = 0) Collector-Emitter V(BR)CEO* Breakdown Voltage ,IC = -10 mA -30 V (IB = 0) IC = -0.5 A IB = -5 mA B VCE(sat)* Collector-Emitter -0.075 IC = -2 A IB = -20 mA B Saturation Voltage -0.21 IC = -1.2 A IB = -20 mA B IC = -0.5 A IB = -5 mA B VBE(sat)* Base-Emitter IC = -1.2 A IB = -20 mA -0.74 B Saturation Voltage IC = -2 A IB = -20 mA B VBE(ON)* hFE* Base-Emitter Voltage DC Current Gain IC = -0.5 A VCE = -2 V -0.71 IC = -0.5 A VCE = -1 V 100 IC = -2.5 A VCE = -3 V 100 ShangHai Sino-IC Microelectronics Co., Ltd. -0.15 V -0.5 V -0.25 V -1.1 V -1.1 V -1.2 V -1.1 V 2. SEBT818BA TYPICAL CHARACTERISTICS ShangHai Sino-IC Microelectronics Co., Ltd. 3. SEBT818BA ShangHai Sino-IC Microelectronics Co., Ltd. 4. SEBT818BA SOT23-5L MECHANICAL DATA ShangHai Sino-IC Microelectronics Co., Ltd. 5. SEBT818BA The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 6.