SE8810A(ESD)

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet ●VDSS = 20 V ●RDS(ON) < 20mΩ @ VGS=4.5V @Ids=7A RDS(ON) < 25mΩ @ VGS=2.5V @Ids=4A Applications ●Battery protection ●Load switch ●Power management Construction ●Silicon epitaxial planer Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous ID 7 Pulsed IDM 28 Drain-Source Diode Forward Current IS 1.7 A Maximum Power Dissipation PD 1.5 W Operating Junction Temperature Range TJ -55 to 150 °C Drain Current (Note 1) Storage Temperature Range ShangHai Sino-IC Microelectronics Co., Ltd. TSTG A 1. SE8810A Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Zero Gate Voltage Drain Current VDS=16 V, VGS=0 V 1 μA IGSS Gate-Body leakage VDS=0 V, VGS=±12 V ±10 μA V B 20 V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS=VGS ID=250μA Static Drain-Source On-Resistance Forward Transconductance 0.5 0.8 1.2 VGS=4.5V, ID=7A - 17 20 VGS=2.5V, ID=5A - 20 25 VDS=5V, ID=5A mΩ 19 S 693 pF 189 pF 136 pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=8V, f=1.0MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=4.0V 11 Qgs Gate Source Charge VDS=10V 1.8 Qgd Gate Drain Charge ID=5A 4.9 td(on) Turn-On DelayTime VGEN=4.0V 31 td(off) Turn-Off DelayTime RGEN=10Ω 96 td(r) Turn-On Rise Time VDD=10V 62 td(f) Turn-Off Fall Time ID=1A 40 ShangHai Sino-IC Microelectronics Co., Ltd. nC ns 2. SE8810A ShangHai Sino-IC Microelectronics Co., Ltd. 3. SE8810A PACKAGE DIMENSION (Uint:mm) SOT-23-6 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 4.