WNMD2167-6/TR

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET VDS (V) Http//:www.willsemi.com Typical Rds(on) (Ω) 0.016@ VGS=4.5V 0.0175@ VGS=3.8V 20 0.018@ VGS=3.1V 0.020@ VGS=2.5V SOT-23-6L Descriptions G1 D1/D2 G2 6 5 4 1 2 3 S1 D1/D2 S2 The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2167 is Pb-free. Features Pin configuration (Top view) 5 6  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23-6L 2167 YYWW 1 Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Will Semiconductor Ltd. 2 3 2167 = Device Code YY = Year WW = Week Applications  4 Marking Order information Device Package Shipping WNMD2167-6/TR SOT-23-6L 3000/Reel&Tape 1 2017/5/26- Rev.1.3 WNMD2167 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 TA=25°C Continuous Drain Current a d ID TA=70°C TA=25°C Maximum Power Dissipation a d PD TA=70°C TA=25°C Continuous Drain Current b ID TA=70°C TA=25°C Maximum Power Dissipation b PD TA=70°C Unit V 6.3 5.7 5.0 4.6 1.1 0.9 0.7 0.6 5.8 5.2 4.6 4.1 0.9 0.7 0.6 0.5 A W A W Pulsed Drain Current c IDM 30 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Single Operation Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b t ≤ 10 s Steady State t ≤ 10 s Steady State Junction-to-Case Thermal Resistance Steady State RθJA RθJA RθJC Typical Maximum 76 94 115 145 92 115 135 175 63 78 79 97 118 148 96 118 138 180 66 81 Unit °C/W Dual Operation Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width