ME3587

ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME3587 is the N- and P-Channel logic enhancement mode ● RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch) DMOS trench technology. This high density process is especially ● RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch) tailored to minimize on-state resistance. These devices are ● RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch) particularly suited for low voltage application such as cellular phone ● RDS(ON)≦130mΩ@VGS=-2.5V (P-Ch) and notebook computer power management and other battery ● RDS(ON) ≦170mΩ@VGS=-1.8V (P-Ch) powered circuits where low in-line power loss are needed in a very ● Super high density cell design for extremely low RDS(ON) small outline surface mount package. ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book PIN CONFIGURATION ● Portable Equipment ● Battery Powered System (TSOP-6) ● Load Switch Top View ● DSC ● LCD Display inverter e Ordering Information: ME3587 (Pb-free) ME3587-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol N-channel P-channel Maximum Ratings Maximum Ratings Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 V 3.4 -2 2.7 -1.6 14 -8 0.8 0.7 0.5 0.5 TJ -55 to 150 -55 to 150 ℃ RθJA 150 175 ℃/W Continuous Drain Current * TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation ID IDM TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* PD e * The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2014-Ver1.5 A A W DCC 正式發行 01 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET N-Channel Mosfet Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current Typ Max Unit STATIC RDS(ON) Drain-Source On-Resistance VSD a Diode Forward Voltage V 1.2 V VDS=0V, VGS=±8V ±100 nA VDS=20V, VGS=0V 1 μA VGS=4.5V, ID= 3.4A 37 45 VGS=2.5V, ID= 3A 52 68 VGS=1.8V, ID= 2A 92 120 IS=1A, VGS=0V 0.7 mΩ V DYNAMIC Qg Total Gate Charge 5.3 Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 15 td(on) Turn-On Delay Time 11 tr Turn-On Rise Time VDS=10V, RL =10Ω 17 td(off) Turn-Off Delay Time RGEN=3Ω, VGS=5V 30 tf Turn-Off Fall time VDS=15V, VGS=4.5V, ID=2.1A nC 1.7 1.4 VDS=0V, VGS=0V, f=1MHz 1.2 Ω 340 VDS=15V, VGS=0V,f=1MHz pF 50 ns 3 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Apr, 2014-Ver1.5 02 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) N-Channel DCC 正式發行 Apr, 2014-Ver1.5 03 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) N-Channel DCC 正式發行 Apr, 2014-Ver1.5 04 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET P-Channel Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current Typ Max Unit STATIC Drain-Source On-Resistance a RDS(ON) VSD Diode Forward Voltage V -1 V VDS=0V, VGS=±8V ±100 nA VDS=-20V, VGS=0V -1 μA VGS=-4.5V, ID= -2.8A 85 110 VGS=-2.5V, ID= -2A 110 130 VGS=-1.8V, ID= -1A 130 170 IS=-1A, VGS=0V -0.7 -1.4 mΩ V DYNAMIC Qg Total Gate Charge 7.2 Qgs Gate-Source Charge Qgd Gate-Drain Charge 1.2 Ciss Input Capacitance 480 Coss Output Capacitance Crss Reverse Transfer Capacitance 10 td(on) Turn-On Delay Time 50 tr Turn-On Rise Time VDS=-6V, RL =6Ω 30 td(off) Turn-Off Delay Time RGEN=6Ω, VGS=-4.5V 40 tf Turn-Off Fall time VDS=-6V, VGS=-4.5V, ID=-2.8A VDS=-15V, VGS=0V,f=1MHz nC 2.2 pF 46 ns 11 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Apr, 2014-Ver1.5 05 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) P-Channel DCC 正式發行 Apr, 2014-Ver1.5 06 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) P-Channel DCC 正式發行 Apr, 2014-Ver1.5 07 ME3587/ME3587-G N- and P-Channel 20V (D-S) MOSFET TSOP-6 Package Outline SYMBOL MILLIMETERS (mm) MIN MAX A 0.90 1.20 A1 0.01 0.10 A2 0.90 1.15 b 0.25 0.50 C 0.10 0.20 D 2.80 3.10 E 2.60 3.00 E1 1.50 1.70 e 0.95 BSC e1 1.90 BSC L 0.30 0.60 DCC 正式發行 Apr, 2014-Ver1.5 08