WPT2F30-6/TR

WPT2F30 WPT2F30 Http//:www.willsemi.com Single, PNP, -30V, -3A, Power Transistor Descriptions The WPT2F30 is PNP bipolar power transistor with very low saturation voltage. This device is suitable for use in charging circuit and other power management. Standard Product WPT2F30 is Pb-free. SOT-23-6L Features z Ultra low collector-to-emitter saturation voltage z High DC current gain >100 z 3A continue collector current z Small package SOT-23-6L. C 1 6 C C 2 5 C B 3 4 E Pin configuration (Top view) 6 5 4 2F30 YYWW 1 Applications 2 3 2F30 = Device code YY = Year WW = Week Marking z Charging circuit z Power regulator z Other power management in portable equipments Will Semiconductor Ltd. Order information Device Package Shipping WPT2F30-6/TR SOT-23-6L 3000/Reel&Tape 1 Nov, 2012 - Rev.1.2 WPT2F30 Absolute maximum ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO -30 V Collector-base voltage VCBO -30 V VEBO -6 V -3 A -2 A -6 A 1.2 W 0.8 W Emitter-base voltage Continues collector current a Continues collector current b Pulse collector current Power dissipation a Power dissipation b IC c ICM PD Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Symbol Value Unit Junction-to-Ambient Thermal Resistance a RθJA 104 °C/W Junction-to-Ambient Thermal Resistance b RθJA 155 °C/W a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width=300µs, Duty Cycle