AP6G03LI

AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Description The AP6G03LI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6.8A RDS(ON) < 25mΩ @ VGS=10V （Type：18mΩ） VDS = -30V ID =-5.8A RDS(ON) < 52mΩ @ VGS=-10V（Type：42mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP6G03LI SOT23-6L AP6G03LI 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 6.8 -5.8 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 3.8 -3 A IDM Pulsed Drain Current2 52 -40 A EAS Single Pulse Avalanche Energy3 22 22 mJ PD@TA=25℃ Total Power Dissipation4 1.5 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 105 ℃/W 36 ℃/W RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 1 1 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET N-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 34 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=5A --- 18 25 VGS=4.5V , ID=3A --- 28 40 VGS(th) Gate Threshold Voltage 1.0 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.2 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 5.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω Qg Total Gate Charge (4.5V) --- 5 --- Qgs Gate-Source Charge --- 1.11 --- Qgd Gate-Drain Charge --- 2.61 --- Td(on) Turn-On Delay Time --- 7.7 --- Tr Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 46 --- Td(off) Turn-Off Delay Time ID=6A --- 11 --- Tf Fall Time --- 3.6 --- Ciss Input Capacitance --- 416 --- Coss Output Capacitance --- 62 --- Crss Reverse Transfer Capacitance --- 51 --- IS Continuous Source Current1,6 --- --- 6.2 A ISM Pulsed Source Current2,6 --- --- 24 A VSD Diode Forward Voltage2 --- --- 1.2 V VGS=VDS , ID =250uA VDS=20V , VGS=4.5V , ID=6A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ mΩ uA nC ns pF Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET P-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 -35 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-4.1A --- 42 52 VGS=-4.5V , ID=-3.5A ---1.0 58 -1.7 70 -2.5 V --- 4.32 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 mΩ VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 4.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 --- Ω Qg Total Gate Charge (-4.5V) --- 5.22 --- --- 1.25 --- --- 2.3 --- --- 18.4 --- --- 11.4 --- --- 39.4 --- --- 5.2 --- --- 463 --- --- 82 --- --- 68 --- --- --- -4 A --- --- -24 A --- --- -1 V Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time Td(off) Turn-Off Delay Time Tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS ISM VSD Continuous Source Pulsed Source Current1,6 VGS=VDS , ID =-250uA VDS=-20V , VGS=-4.5V , ID=-5A VDD=-15V, VGS=-10V , RG=3.3Ω ID=-1A VDS=-15V , VGS=0V , f=1MHz VG=VD=0V , Force Current Current2,6 Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ uA nC ns pF Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The power dissipation is limited by 150℃ junction temperature 4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET N-Channel Typical Characteristics -50 0 50 100 TJ ,Junction Temperature (℃ ) AP6G03LI RVE1.0 -50 0 50 100 150 TJ , Junction Temper℃) Fig.6 Normalized RDSON vs. TJ 永源微電子科技有限公司 4 Fig.5 Normalized VGS(th) vs. TJ 150 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 2 L x IAS x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform 5 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET P-Channel Typical Characteristics 0 0.3 0.6 0.9 1.2 0 2.5 -VSD , Source-to-Drain Voltage (V) 5 7.5 10 QG , Total Gate Charge (nC Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 1.5 2.0 1 1.5 0.5 1.0 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ) Fig.5 Normalized VGS(th) vs. TJ 150 -50 0 50 100 TJ , Junction Temperature () 150 Fig.6 Normalized RDSON vs. TJ 6 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 7 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Package Mechanical Data-SOT23-6-Double Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 C 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.037(BSC) 0.950（BSC） e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0 8 0 8 8 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. 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APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 9 AP6G03LI RVE1.0 永源微電子科技有限公司 AP6G03LI 30V N+P-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2021/12/21 Initial release Copyright Attribution“APM-Microelectronice” 10 AP6G03LI RVE1.0 永源微電子科技有限公司