G085P02TS

G085P02TS P-Channel Enhancement Mode Power MOSFET Description The G085P02TS uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l l l l l l VDS ID (at VGS = -10V) RDS(ON) (at VGS = -4.5V) RDS(ON) (at VGS = -2.5V) RDS(ON) (at VGS = -1.8V) 100% Avalanche Tested -20V -8.2A < 8.5mΩ < 11mΩ < 14mΩ Schematic diagram l RoHS Compliant Application l Power switch l DC/DC converters TSSOP-8 Ordering Information Device Package Marking Packaging G085P02TS TSSOP-8 G085P02 5000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDS -20 V ID -8.2 A IDM -32.8 A Gate-Source Voltage VGS ±8 V Power Dissipation PD 1.05 W TJ, Tstg -55 To 150 ºC Symbol Value Unit RthJA 119 ºC/W Drain-Source Voltage Continuous Drain Current Pulsed Drain Current (note1) Operating Junction and Storage Temperature Range Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) G085P02TS Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current Gate-Source Leakage Value Unit Min. Typ. Max. VGS = 0V, ID = -250µA -20 -- -- V IDSS VDS = -20V, VGS = 0V -- -- -1 μA IGSS VGS = ±8V -- -- ±100 nA VGS(th) VDS = VGS, ID = -250µA -0.55 -- -0.9 V VGS = -4.5V, ID = -4.2A -- 7.0 8.5 VGS = -2.5V, ID = -3.2A -- 8.0 11 VGS = -1.8V, ID = -2.2A -- 10 14 VDS = -5V,ID = -4.1A 6 -- -- -- 1255 -- -- 220 -- -- 190 -- -- 29 -- -- 5.2 -- -- 6.3 -- -- 230 -- -- 800 -- -- 3000 -- -- 2000 -- Static Parameters Gate-Source Threshold Voltage Drain-Source On-Resistance RDS(on) gFS Forward Transconductance mΩ S Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time VGS = 0V, VDS = -10V, f = 1.0MHz VDD = -10V, ID = -8A, VGS = -10V VDD = -10V, ID = -3.3A, RG = 1Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current Body Diode Voltage IS TC = 25ºC -- -- -8.2 A VSD TJ = 25ºC, ISD = -8.2A, VGS = 0V -- -- -1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) G085P02TS Gate Charge Test Circuit Switch Time Test Circuit EAS Test Circuit www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) G085P02TS Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 2. Transfer Characteristics -ID, Drain Current (A) -ID, Drain Current (A) Figure 1. Output Characteristics -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. Gate Charge RDS(on), On-Resistance (mΩ) -Vgs Gate-Source Voltage（V） Figure 3.Drain Source On Resistance -ID-Drain Current (A) Qg Gate Charge（nC） Figure 6. Source-Drain Diode Forward Capacitance(pF) -Is, Reverse Drain Current (A) Figure 5. Capacitance -VDS Drain-Source Voltage(V) www.gofordsemi.com TEL：0755-29961263 -VSD, Source-to-Drain Voltage (V) FAX:0755-29961466(V1.0) G085P02TS Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 10. Safe Operation Area -ID, Drain Current(A) RDS(on), (Normalized) Figure 7. Drain-Source On-Resistance ZthJC, Thermal Impedance (ºC/W) TJ, Junction Temperature (ºC) -VDS, Drain-Source Voltage(V) Figure 9. Normalized Maximum Transient Thermal Impedance Pulse Width (s) www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0) G085P02TS TSSOP-8 Package Information www.gofordsemi.com TEL：0755-29961263 FAX:0755-29961466(V1.0)