SE2N60B

Oct 2014 SE2N60B N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics,   such as fast switching time, low gate charge, VDS = 600V RDS(ON) = 3.4Ω @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current 2 ID A Pulsed Avalanche Energy Single Pulsed 3 8 EAS 180 mJ Dv/dt 4.5 V/ns Power Dissipation PD 33 W Operating Junction Temperature Range TJ -55 to 150 ℃ Peak Diode Recovery dv/dt 4 Thermal Resistance Symbol RθJA Parameter Junction to Ambient (t≦10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ. Max. Units 62.5 ℃/W 1. SE2N60B Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA, IDSS Drain to Source Leakage Current VDS=600V, VGS=0V IGSS Gate-Body Leakage Current VGS=30V VGS(th) RDS(ON) Gate Threshold Voltage VDS= VGS, ID=250μA Static Drain-Source On-Resistance 2 VGS=10V, ID=1A 600 V 1 μA 100 nA 4.5 V 3.4 4.3 Ω 520 680 pF 60 80 pF 8 10.5 pF 2.5 DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 2 10.5 VGS=10V, VDS=520V, 13.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VDS=325V, RGEN=25Ω 11 33 ns td(off) Turn-Off Delay Time ID=2A 45 90 ns td(r) Turn-On Rise Time 40 88 ns td(f) Turn-Off Fall Time 48 100 ns 1.4 V ID=2A 2.5 nC 4.0 nC Source-Drain Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V,IS=2A IS Max Drain-Source Diode Current 2 A ISM Max Pulse Drain-Source Current 8 A trr Reverse Recovery Time QRR Reverse Recovery Charge ShangHai Sino-IC Microelectronic Co., Ltd. VGS=0V,IS=2A dIF/dt=100A/μs 1 300 ns 2.2 μC 2. SE2N60B Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE2N60B ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE2N60B Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 5. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.com Website: http://www.sino-ic.com ShangHai Sino-IC Microelectronic Co., Ltd. 6.