SI2302 2.5A

SI2302 SOT-23 Plastic-Encapsulate Transistors SI2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2sHB: MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VDS Value Units Drain-Source voltage Parameter 20 V ±12 2.5 V 0.9 W VGS Gate-Source voltage ID Drain current PD Power Dissipation Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ A ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol V(BR)DSS Test conditions VGS=0V,ID=250uA 20 0.5 Vth(GS) VDS= VGS, ID=250 uA Gate-body Leakage IGSS VDS=0V, VGS=±10V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Drain-Source On-Resistance rDS(ON) Forward Trans conductance gfs MIN TYP MAX UNIT V 0.75 1.2 V ±100 1 nA uA VGS=2.5V, ID=1.0A 50 85 mΩ VGS=4.5V, ID=2.5A 40 50 VDS=5V, ID=2.9A 8.0 mΩ s Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 260 VDS=10V, VGS=0V, f=1MHz pF 48 27 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 nS VDD=10V, ID=2.5A, VGS=4.5V RGEN=2.8Ω 3.2 nS 21 nS 3.0 nS VDS=10V, ID=2.5A, VGS=4.5V, 2.9 nC 0.4 nC 0.6 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current Is www.yongyutai.com VGS=0V, IS=2.5A 1.2 V 2.0 A PAGE 1 SI2302 Typical Characteristics www.yongyutai.com PAGE 2